First principles study of stability and electronic properties of Sn/Ge core-shell nanowire

In the present work, we have presented core/shell geometry of GeSn NW, where Ge shell is built around very thin Sn cores. We have studied phonon dispersive curve and its binding energy for dynamical and thermodynamic stability of the NW. We have observed direct bad gap of 0.68 eV for the Sn/Ge NW. T...

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Bibliographic Details
Main Authors: Bhuyan, Prabal Dev, Gupta, Sanjeev K., Sonvane, Yogesh, Gajjar, P. N., Nekrasov, K. A., Kupryazhkin, A. Ya
Format: Conference Proceeding
Language:English
Subjects:
Conduction bands
Dynamic stability
Electronic properties
First principles
Germanium
Light emitting diodes
Nanowires
Silicon
Tin
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Summary:In the present work, we have presented core/shell geometry of GeSn NW, where Ge shell is built around very thin Sn cores. We have studied phonon dispersive curve and its binding energy for dynamical and thermodynamic stability of the NW. We have observed direct bad gap of 0.68 eV for the Sn/Ge NW. The valance band is contributed by Ge atom, while the conduction band is contributed by Sn atom near the Fermi level. The direct band gap in Sn/Ge NW indicates its potential application in Si-based light emitting diode as future light energy source.
ISSN:0094-243X
1551-7616
DOI:10.1063/1.5134379