Temperature effect on electronics properties for alloys GaxIn1-xAs and InP and mole fraction of gallium for alloy GaxIn1-xAs

Thermal treatment and mole fraction of Gallium plays a major role on the electronic properties of alloys. That may enhance some of their properties and so increase their efficiency in the technical applications. In this work, the thermal effects on the electronic properties for semiconductor ternary...

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Bibliographic Details
Main Authors: AL Hamade, Hassan T. B., Sabbar, Ali N., Tuhaiwer, Akeel Sh
Format: Conference Proceeding
Language:English
Subjects:
Alloys
Carrier density
Electrical resistivity
Electronic properties
Energy gap
Gallium
Heat treatment
Indium phosphides
Temperature effects
Ternary alloys
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Summary:Thermal treatment and mole fraction of Gallium plays a major role on the electronic properties of alloys. That may enhance some of their properties and so increase their efficiency in the technical applications. In this work, the thermal effects on the electronic properties for semiconductor ternary alloys GaxIn1-xAs and InP have been studied. For the mentioned alloys, the results tend to reduce the energy gap as the temperature increased. After 350K°, concentrations of the carrier in alloy Ga0.35In0.65As rapidly increased as temperature increased. While at 420K° the carrier concentration changed abruptly in the InP alloy. The increase in temperature is highly affected on the effective density of states and electrical conductivity for both alloys. The carrier concentrations and energy gap equations as a function to temperature (for the alloy GaxIn1-xAs at different concentrations of gallium (x)) are investigated.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0000114