On the crossing behavior of forward current-voltage characteristics of Ni/SiO2/p-Si/Al MIS diode

This paper explains the phenomena of intersection of current-voltage (I-V) curves observed experimentally in Ni/SiO2/p-Si/Al MIS Schottky diode at low temperatures from 290-80K. The series resistance (Rs) was found to decrease with decrease in temperature and leads to saturate the forward ln(I)-V pl...

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Bibliographic Details
Main Authors: Kumar, Naveen, Chand, Subhash
Format: Conference Proceeding
Language:English
Subjects:
Aluminum
Current voltage characteristics
Diffusion barriers
Emission analysis
Low temperature
Low temperature resistance
Nickel
Resistance factors
Schottky diodes
Silicon dioxide
Thermionic emission
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Summary:This paper explains the phenomena of intersection of current-voltage (I-V) curves observed experimentally in Ni/SiO2/p-Si/Al MIS Schottky diode at low temperatures from 290-80K. The series resistance (Rs) was found to decrease with decrease in temperature and leads to saturate the forward ln(I)-V plots at higher currents, as a result of which intersection of ln(I)-V curves occurs. The barrier height (ϕb), ideality factor (η) and series resistance (Rs) has been evaluated from forward ln(I)-V curves using thermionic emission diffusion (TED) theory. Barrier height was found to decrease while the ideality factor increases with decreases in temperatures from 290 80-K. The activation energy plot shows nonlinearity in the measured temperature range which indicates the presence of other current mechanisms such as tunneling current, recombination current along with thermionic emission through the barrier. The Richardson constant value found by the intercept of linearly fitted ln (Is/T2) vs 1/T plot is 3.29×10-4Am-2 K-2, much lower than the actual value of p-type silicon i.e. 3.2×105Am−2 K−2.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0001648