Sequential ionic layer adsorption reaction (SILAR) – A facile, low-cost growth method for ternary semiconductors for solar cells

Idescribe the basic principle and experimental method of the sequential ionic layer adsorption reaction(SILAR) method. The advantages and disadvantages of various physical methods and chemical methods for growth of semiconductor nanocrystals (NCs) are discussed and compared. It is concluded that SIL...

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Bibliographic Details
Main Author: Lee, Ming-Way
Format: Conference Proceeding
Language:English
Subjects:
Adsorption
Energy conversion efficiency
Low cost
Nanocrystals
Photovoltaic cells
Quantum dots
Semiconductors
Solar cells
Spectroscopy
Spectrum analysis
Synthesis
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Summary:Idescribe the basic principle and experimental method of the sequential ionic layer adsorption reaction(SILAR) method. The advantages and disadvantages of various physical methods and chemical methods for growth of semiconductor nanocrystals (NCs) are discussed and compared. It is concluded that SILAR is a simple, low cost and, arguably, the best method for growth of ternary semiconductors for applications in quantum dot sensitized solar cells (QDSSCs). Sb2S3 NCs are presented as an example of SILAR growth of binary semiconductors. Ternary metal chalcogenide Pb5Sb8S17 isused as an example of SILAR growth of ternary semiconductors. Pb5Sb8S17 NCs were grown by a two-stage SILAR method. The synthesized material was characterized by X-ray diffraction, energy dispersive spectroscopy, transmission electron microscopy and optical spectroscopy. Solid-state Pb5Sb8S17 QDSSCs were fabricated from the synthesized NCs. The best cell achieved a power conversion efficiency of ∼6%under 0.1 sun. The work demonstrates that SILAR is a powerful tool for preparation of ternary semiconductor NCs for solar applications.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0003062