New approaches for achieving more perfect transition metal oxide thin films

• Published in: APL materials 2020-04, Vol.8 (4), p.040904-040904-13
• Main Authors: MacManus-Driscoll, J. L., Wells, Matthew P., Yun, Chao, Lee, Jung-Woo, Eom, Chang-Beom, Schlom, Darrell G.
• Format: Article
• Language: English
• ISSN: 2166-532X; 2166-532X
• DOI: 10.1063/5.0003268

This perspective considers the enormous promise of epitaxial functional transition metal oxide thin films for future applications in low power electronic and energy applications since they offer wide-ranging and highly tunable functionalities and multifunctionalities, unrivaled among other classes of materials. It also considers the great challenges that must be overcome for transition metal oxide thin films to meet what is needed in the application domain. These challenges arise from the presence of intrinsic defects and strain effects, which lead to extrinsic defects. Current conventional thin film deposition routes often cannot deliver the required perfection and performance. Since there is a strong link between the physical properties, defects and strain, routes to achieving more perfect materials need to be studied. Several emerging methods and modifications of current methods are presented and discussed. The reasons these methods better address the perfection challenge are considered and evaluated.