Photoluminescence study of non-polar m-plane InGaN and nearly strain-balanced InGaN/AlGaN superlattices

Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium composition up to 21% and nearly strain-balanced In0.09Ga0.91N/Al0.19Ga0.81N superlattices grown by plasma-assisted molecular beam epitaxy was performed as a function of temperature. The experimental transition ener...

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Bibliographic Details
Published in:Journal of applied physics 2020-05, Vol.127 (18)
Main Authors: Cao, Yang, Dzuba, Brandon, Magill, Brenden A., Senichev, Alexander, Nguyen, Trang, Diaz, Rosa E., Manfra, Michael J., McGill, Stephen, Garcia, Carlos, Khodaparast, Giti A., Malis, Oana
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Composition
Epitaxial growth
Indium gallium nitrides
Low temperature
Molecular beam epitaxy
Photoluminescence
Quantum wells
Radiative recombination
Relaxation time
Room temperature
Superlattices
Temperature
Thin films
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Summary:Photoluminescence (PL) spectroscopy of nonpolar m-plane InGaN thin films with indium composition up to 21% and nearly strain-balanced In0.09Ga0.91N/Al0.19Ga0.81N superlattices grown by plasma-assisted molecular beam epitaxy was performed as a function of temperature. The experimental transition energies are consistently lower than the calculation based on structural parameters extracted from x-ray diffraction measurements. This indicates the presence of indium composition fluctuations in InGaN and hence local bandgap reduction that produces charge localization centers. The spectral width of the low-temperature PL of our m-plane InGaN/AlGaN superlattices is narrower than previously reported for m-plane InGaN/GaN quantum wells grown by MOCVD. The PL integrated intensity drops rapidly, though, as the temperature is increased to 300 K, indicating strong non-radiative recombination at room temperature. Time-resolved PL at low temperatures was performed to characterize the relaxation time scales in an undoped and a doped superlattice.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0003740