Faraday-cage-assisted etching of suspended gallium nitride nanostructures

We have developed an inductively coupled plasma etching technique using a Faraday cage to create suspended gallium-nitride devices in a single step. The angle of the Faraday cage, gas mix, and chamber condition define the angle of the etch and the cross-sectional profile, which can feature undercut...

Full description

Saved in:
Bibliographic Details
Published in:AIP advances 2020-05, Vol.10 (5), p.055319-055319-4
Main Authors: Gough, Geraint P., Sobiesierski, Angela D., Shabbir, Saleem, Thomas, Stuart, Beggs, Daryl M., Taylor, Robert A., Bennett, Anthony J.
Format: Article
Language:English
Subjects:
C band
Cages
Cross-sections
Faraday cage
Gallium nitrides
Inductively coupled plasma
Plasma etching
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have developed an inductively coupled plasma etching technique using a Faraday cage to create suspended gallium-nitride devices in a single step. The angle of the Faraday cage, gas mix, and chamber condition define the angle of the etch and the cross-sectional profile, which can feature undercut angles of up to 45°. We fabricate singly- and doubly-clamped cantilevers of a triangular cross section and show that they can support single optical modes in the telecom C-band.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0007947