Bandwidth enhancement in an InGaN/GaN three-section superluminescent diode for optical coherence tomography

In this paper, the optoelectronic properties of InGaN-based blue (430 nm) superluminescent light-emitting diodes with a multi-section, three contact design are reported. The bias conditions of the rear absorber section and gain sections are explored in terms of enhancing and maximizing spectral band...

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Bibliographic Details
Published in:Applied physics letters 2020-08, Vol.117 (6)
Main Authors: Goldberg, Graham R., Kim, Dae-Hyun, Taylor, Richard J. E., Childs, David T. D., Ivanov, Pavlo, Ozaki, Nobuhiko, Kennedy, Kenneth L., Groom, Kristian M., Harada, Yukihiro, Hogg, Richard A.
Format: Article
Language:English
Subjects:
Absorbers
Applied physics
Circuits
Emission analysis
Indium gallium nitrides
Light emitting diodes
Optical Coherence Tomography
Optical properties
Optimization
Optoelectronics
Short circuits
Superluminescent diodes
Tomography
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Summary:In this paper, the optoelectronic properties of InGaN-based blue (430 nm) superluminescent light-emitting diodes with a multi-section, three contact design are reported. The bias conditions of the rear absorber section and gain sections are explored in terms of enhancing and maximizing spectral bandwidth. We demonstrate that broader emission can be obtained with a short circuit, rather than an open circuit absorber section, and with two active regions at different current densities as opposed to a single active contact. Under optimal drive conditions, a −3 dB linewidth of 20 nm is obtained at 430 nm. Analysis of the device emission spectrum indicates that an axial resolution of ∼3.4 μm may be obtained in an optical coherence tomography system.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0010795