Role of Ga3+/Ti 4+ induced defects on UV sensing applications of Zn0.96875 (GaxTi 1-x) 0.03125 O

The simultaneous substitution of Ga3+ and Ti4+ for Zn2+ in ZnO has the tendency to reduce oxygen vacancies because of the higher charge of Ga3+ and Ti4+ ions than the Zn2+ ion. The reduction in oxygen vacancies has been verified from the photoluminescence studies. The UV sensing mechanism exhibits f...

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Bibliographic Details
Main Authors: Mishra, Prashant Kumar, Ayaz, Saniya, Bajpai, Gaurav, Nasir, Mohd, Gupta, Prashant, Sen, Somaditya
Format: Conference Proceeding
Language:English
Subjects:
Defects
Interstitials
Oxygen
Photoelectric effect
Photoelectric emission
Photoluminescence
Vacancies
Zinc oxide
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Summary:The simultaneous substitution of Ga3+ and Ti4+ for Zn2+ in ZnO has the tendency to reduce oxygen vacancies because of the higher charge of Ga3+ and Ti4+ ions than the Zn2+ ion. The reduction in oxygen vacancies has been verified from the photoluminescence studies. The UV sensing mechanism exhibits fast and slow response and recovery. Ga3+ incorporation enhances the photocurrent drastically as revealed from UV sensing behavior. The higher sensitivity is achieved for of (Ga/Ti) co-doped samples due to the increase in oxygen interstitials defects.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0016767