Evolution of nanocrystalline diamond thin films by high-density low-pressure CH4 plasma in planar inductively coupled plasma CVD

The prime objective of the present investigation is to enable growth of nanocrystalline diamond thin films at a moderate temperature and on inexpensive glass substrates without conventional pre-treatment by diamond powders. Using most familiar CH4 precursors diluted by Ar at remarkably low-pressure...

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Bibliographic Details
Main Authors: Saha, Sucharita, Das, Debajyoti
Format: Conference Proceeding
Language:English
Subjects:
Bias
Chemical vapor deposition
Crystallography
Density
Diamond films
Diamonds
Flow velocity
Glass substrates
Inductively coupled plasma
Low pressure
Methane
Nanocrystals
Nanostructure
Optimization
Photomicrographs
Plasma
Precursors
Pretreatment
Thin films
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Summary:The prime objective of the present investigation is to enable growth of nanocrystalline diamond thin films at a moderate temperature and on inexpensive glass substrates without conventional pre-treatment by diamond powders. Using most familiar CH4 precursors diluted by Ar at remarkably low-pressure and high-density plasma triggered at 900 W of RF power in planar inductively coupled plasma (ICP) CVD, nanodiamond thin films were prepared at 450°C, by optimizing the flow rate of the precursor gas at 30 mTorr pressure and, further by applying negative dc bias to the substrates. Excellent crystalline quality of the optimum nanodiamond thin film grown with 25 sccm CH4 and -40 V of substrate bias was demonstrated by the well-identified crystallographic planes in the TEM micrograph, supported by ~50.28% C-C sp3 component obtained from the XPS data and minimum of ID/IG ~0.357 and maximum of IDia/ID ~1.780 in corresponding Raman spectrum.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0016897