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Effect of variation in RF sputtering power on the electrical characteristics of Al/Gd2O3/p-Si MOS capacitors

The effects of different sputtering power on the physical and electrical properties of Gadolinium oxide (Gd2O3) films grown by RF Magnetron sputtering is investigated in this paper. All the films were deposited at room temperature with varying sputtering power from 20 W to 80 W in 20 W steps. The co...

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Bibliographic Details
Main Authors: Thilipan, G. Arun Kumar, Rao, Ashwath
Format: Conference Proceeding
Language:English
Subjects:
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Summary:The effects of different sputtering power on the physical and electrical properties of Gadolinium oxide (Gd2O3) films grown by RF Magnetron sputtering is investigated in this paper. All the films were deposited at room temperature with varying sputtering power from 20 W to 80 W in 20 W steps. The composition of the films was studied by X-ray photo electron spectroscopy (XPS) while microstructural and morphological modifications were studied by Atomic Force Microscopy (AFM). The chemical composition of the film improved with increasing sputtering power and at higher powers, films exhibited excess oxygen concentration. The minimum flatband voltage shift and lowest effective oxide charge density values were obtained from MOS capacitor with Gd2O3 grown at 40 W power.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0017969