Electrical resistivity studies on Cd0.9Zn0.1Te single crystals grown by travelling heater method

Cd0.9Zn0.1Te (CZT) single crystals were grown by traveling heater method using Te asa solvent. The structural quality of the grown single crystals ischaracterized by X-ray diffraction, atomic force microscopy and Raman spectroscopy. The X-ray rocking curve analysis confirms the good crystalline perf...

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Main Authors: Vijayakumar, P., Amaladass, E. P., Ganesan, K., Sarguna, R. M., Chinnathambi, S., Ganesamoorthy, S., Sridharan, V., Mani, Awadhesh, Subramanian, N.
Format: Conference Proceeding
Language:English
Subjects:
Atomic force microscopy
Cadmium zinc tellurides
Crystal growth
Crystal structure
Current voltage characteristics
Electrical resistivity
Raman spectroscopy
Single crystals
Spectrum analysis
Surface preparation
Traveling Heater Method
Wafers
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Summary:Cd0.9Zn0.1Te (CZT) single crystals were grown by traveling heater method using Te asa solvent. The structural quality of the grown single crystals ischaracterized by X-ray diffraction, atomic force microscopy and Raman spectroscopy. The X-ray rocking curve analysis confirms the good crystalline perfection of the CZT wafers. Raman spectroscopy reveals the two-mode behavior of CZT crystals having CdTe- and ZnTe- like structures with transverse and longitudinal optical frequencies at 141.5, 159.6, and 175.3 cm−1.I-V characteristics of the CZT wafers areperformedunder different surface preparation conditions. Highest resistivity of about 1.36 x 1011Ω.cm is obtainedfor the CZT wafer using gold electrodes with post-deposition thermal annealing.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0018571