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Electrical resistivity studies on Cd0.9Zn0.1Te single crystals grown by travelling heater method

Cd0.9Zn0.1Te (CZT) single crystals were grown by traveling heater method using Te asa solvent. The structural quality of the grown single crystals ischaracterized by X-ray diffraction, atomic force microscopy and Raman spectroscopy. The X-ray rocking curve analysis confirms the good crystalline perf...

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Main Authors:	Vijayakumar, P., Amaladass, E. P., Ganesan, K., Sarguna, R. M., Chinnathambi, S., Ganesamoorthy, S., Sridharan, V., Mani, Awadhesh, Subramanian, N.
Format:	Conference Proceeding
Language:	English
Subjects:	Atomic force microscopy Cadmium zinc tellurides Crystal growth Crystal structure Current voltage characteristics Electrical resistivity Raman spectroscopy Single crystals Spectrum analysis Surface preparation Traveling Heater Method Wafers
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creator	Vijayakumar, P. Amaladass, E. P. Ganesan, K. Sarguna, R. M. Chinnathambi, S. Ganesamoorthy, S. Sridharan, V. Mani, Awadhesh Subramanian, N.
description	Cd0.9Zn0.1Te (CZT) single crystals were grown by traveling heater method using Te asa solvent. The structural quality of the grown single crystals ischaracterized by X-ray diffraction, atomic force microscopy and Raman spectroscopy. The X-ray rocking curve analysis confirms the good crystalline perfection of the CZT wafers. Raman spectroscopy reveals the two-mode behavior of CZT crystals having CdTe- and ZnTe- like structures with transverse and longitudinal optical frequencies at 141.5, 159.6, and 175.3 cm−1.I-V characteristics of the CZT wafers areperformedunder different surface preparation conditions. Highest resistivity of about 1.36 x 1011Ω.cm is obtainedfor the CZT wafer using gold electrodes with post-deposition thermal annealing.
doi_str_mv	10.1063/5.0018571
format	conference_proceeding
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Raman spectroscopy reveals the two-mode behavior of CZT crystals having CdTe- and ZnTe- like structures with transverse and longitudinal optical frequencies at 141.5, 159.6, and 175.3 cm−1.I-V characteristics of the CZT wafers areperformedunder different surface preparation conditions. 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P.</creatorcontrib><creatorcontrib>Ganesan, K.</creatorcontrib><creatorcontrib>Sarguna, R. M.</creatorcontrib><creatorcontrib>Chinnathambi, S.</creatorcontrib><creatorcontrib>Ganesamoorthy, S.</creatorcontrib><creatorcontrib>Sridharan, V.</creatorcontrib><creatorcontrib>Mani, Awadhesh</creatorcontrib><creatorcontrib>Subramanian, N.</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vijayakumar, P.</au><au>Amaladass, E. P.</au><au>Ganesan, K.</au><au>Sarguna, R. M.</au><au>Chinnathambi, S.</au><au>Ganesamoorthy, S.</au><au>Sridharan, V.</au><au>Mani, Awadhesh</au><au>Subramanian, N.</au><au>Yusuf, S. M.</au><au>Sharma, Veerendra K.</au><au>Prajapat, C. L.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Electrical resistivity studies on Cd0.9Zn0.1Te single crystals grown by travelling heater method</atitle><btitle>AIP conference proceedings</btitle><date>2020-11-05</date><risdate>2020</risdate><volume>2265</volume><issue>1</issue><issn>0094-243X</issn><eissn>1551-7616</eissn><coden>APCPCS</coden><abstract>Cd0.9Zn0.1Te (CZT) single crystals were grown by traveling heater method using Te asa solvent. The structural quality of the grown single crystals ischaracterized by X-ray diffraction, atomic force microscopy and Raman spectroscopy. The X-ray rocking curve analysis confirms the good crystalline perfection of the CZT wafers. Raman spectroscopy reveals the two-mode behavior of CZT crystals having CdTe- and ZnTe- like structures with transverse and longitudinal optical frequencies at 141.5, 159.6, and 175.3 cm−1.I-V characteristics of the CZT wafers areperformedunder different surface preparation conditions. Highest resistivity of about 1.36 x 1011Ω.cm is obtainedfor the CZT wafer using gold electrodes with post-deposition thermal annealing.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0018571</doi><tpages>4</tpages></addata></record>
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source	American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
subjects	Atomic force microscopy Cadmium zinc tellurides Crystal growth Crystal structure Current voltage characteristics Electrical resistivity Raman spectroscopy Single crystals Spectrum analysis Surface preparation Traveling Heater Method Wafers
title	Electrical resistivity studies on Cd0.9Zn0.1Te single crystals grown by travelling heater method
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