Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning

A diamond (111) substrate cleaned with an NH3/H2O2 mixture could form low-temperature direct bonding under atmospheric conditions. When the diamond surface was bonded with a plasma activated SiO2 surface at 200 °C, the bonding strength was sufficiently high so that cleavage within diamond occurred i...

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Bibliographic Details
Published in:Applied physics letters 2020-11, Vol.117 (20)
Main Authors: Fukumoto, Shoya, Matsumae, Takashi, Kurashima, Yuichi, Takagi, Hideki, Umezawa, Hitoshi, Hayase, Masanori, Higurashi, Eiji
Format: Article
Language:English
Subjects:
Ammonia
Applied physics
Bonding strength
Chemical bonds
Cleaning
Diamonds
Electronic devices
Hydrogen peroxide
Low temperature
Shear tests
Silicon dioxide
Silicon substrates
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Summary:A diamond (111) substrate cleaned with an NH3/H2O2 mixture could form low-temperature direct bonding under atmospheric conditions. When the diamond surface was bonded with a plasma activated SiO2 surface at 200 °C, the bonding strength was sufficiently high so that cleavage within diamond occurred in a shear test. Moreover, the diamond and Si substrates treated with the NH3/H2O2 mixture could form atomic bonds with a 2.5-nm-thick oxide intermediate layer. This bonding method can be applied to electronic devices using diamond because heterogeneous integration can be achieved using a popular wafer cleaning process followed by low-temperature annealing.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0026348