The formation of optically active centers in silica glass during implantation of bismuth ions

Optically transparent SiO2 glass was implanted in a pulsed mode with 30 keV Bi-ions with different doses: 1016, 5·1016, 1017, 3·1017 pcs/cm2. The depth of penetration of ions into the studied SiO2 samples was estimated using the SRIM software package and is in the depth range of 10-60 nm. Optical ab...

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Bibliographic Details
Main Authors: Galiulina, J. S., Mamonov, A. P., Koubisy, M. S. I., Shtang, T. V., Biryukov, D. Yu, Gavrilov, N. V., Zatsepin, A. F.
Format: Conference Proceeding
Language:English
Subjects:
Absorption spectra
Bismuth
Defects
Ion implantation
Optical activity
Reinforced reaction injection molding
Silica glass
Silicon dioxide
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Summary:Optically transparent SiO2 glass was implanted in a pulsed mode with 30 keV Bi-ions with different doses: 1016, 5·1016, 1017, 3·1017 pcs/cm2. The depth of penetration of ions into the studied SiO2 samples was estimated using the SRIM software package and is in the depth range of 10-60 nm. Optical absorption spectra were recorded on a vacuum spectrophotometer McPherson VuVAS 1000 Pl. It has a non-elementary form, which indicates the presence of active centers and structural defects associated with intrinsic defects of silicon dioxide glass, as well as with bismuth ions.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0032193