Experimental estimation of the spin diffusion length in undoped p-Ge on Fe3Si using vertical spin-valve devices

Using vertical spin-valve devices, we experimentally investigate the room-temperature spin diffusion length in an undoped p-Ge layer grown on ferromagnetic Fe 3Si. Because low-temperature molecular beam epitaxy techniques enable us to grow vertically stacked and all-epitaxial CoFe/Ge/Fe 3Si trilayer...

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Bibliographic Details
Published in:Journal of applied physics 2021-01, Vol.129 (1)
Main Authors: Yamada, A., Yamada, M., Shiihara, T., Ikawa, M., Yamada, S., Hamaya, K.
Format: Article
Language:English
Subjects:
Diffusion layers
Diffusion length
Epitaxial growth
Ferromagnetism
Germanium
Iron silicide
Low temperature
Molecular beam epitaxy
Room temperature
Silicon
Spin valves
Substrates
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Summary:Using vertical spin-valve devices, we experimentally investigate the room-temperature spin diffusion length in an undoped p-Ge layer grown on ferromagnetic Fe 3Si. Because low-temperature molecular beam epitaxy techniques enable us to grow vertically stacked and all-epitaxial CoFe/Ge/Fe 3Si trilayers on Si(111), we can intentionally vary the thickness ( t Ge) of the intermediate undoped p-Ge layer during the growth. With decreasing t Ge, the magnitude of the spin signals gradually increases at room temperature. From the analysis based on the model by Fert and Jaffrès, the room-temperature spin diffusion length in the undoped p-Ge grown on Fe 3Si is experimentally estimated to be ∼ 8.4 nm, much shorter than those reported in previous works on commercial p-Ge substrates.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0035323