Origin of defect luminescence in ultraviolet emitting AlGaN diode structures

Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect lumine...

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Bibliographic Details
Published in:Applied physics letters 2021-05, Vol.118 (20)
Main Authors: Feneberg, Martin, Romero, Fátima, Goldhahn, Rüdiger, Wernicke, Tim, Reich, Christoph, Stellmach, Joachim, Mehnke, Frank, Knauer, Arne, Weyers, Markus, Kneissl, Michael
Format: Article
Language:English
Subjects:
Applied physics
Emitters
Excitation spectra
Light emitting diodes
Luminescence
Multilayers
Photoluminescence
Quantum wells
Spectral emittance
Synchrotrons
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Summary:Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230 nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0047021