P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing

Co-implantation of Mg with N has been shown to improve p-type conductivity in Mg-implanted GaN. Achievement of p-type material still requires temperatures beyond the thermodynamic stability of GaN, however. In this study, we present results of implantation and anneal activation of GaN, co-implanted...

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Bibliographic Details
Published in:Journal of applied physics 2021-08, Vol.130 (8)
Main Authors: Meyers, V., Rocco, E., Hogan, K., McEwen, B., Shevelev, M., Sklyar, V., Jones, K., Derenge, M., Shahedipour-Sandvik, F.
Format: Article
Language:English
Subjects:
Annealing
Applied physics
Cyclotron resonance devices
Electrical properties
Implantation
Luminescence
Metalorganic chemical vapor deposition
Optical properties
Photoluminescence
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Summary:Co-implantation of Mg with N has been shown to improve p-type conductivity in Mg-implanted GaN. Achievement of p-type material still requires temperatures beyond the thermodynamic stability of GaN, however. In this study, we present results of implantation and anneal activation of GaN, co-implanted with Mg and N or Mg only by repeated, short thermal cycles of 1350 °C using a high-power gyrotron microwave source with a quasi-gaussian intensity profile. Spatial variations in optical and electrical properties of the resulting films are characterized by photoluminescence and diode I–V and C–V measurements. Resistive Mg/N co-implanted and annealed material shows dominant luminescence of the VN-related green luminescence (GL2) band at 2.37 eV and relatively lower intensity acceptor-related ultraviolet luminescence (UVL) at 3.27 eV. However, a material showing p–n diode behavior shows higher-intensity UVL luminescence and suppression of the GL2 band, permitting observation of the yellow luminescence (YL) present in the as-grown GaN. The YL is attributed to unintentionally introduced CN–ON complexes and is commonly observed in GaN grown by metalorganic chemical vapor deposition but is typically absent in implanted/annealed GaN. Co-implanted material is compared to material implanted only with Mg and annealed under the same conditions, which shows p-type activation, but contains persistent GL2 luminescence post-anneal and lowers maximum hole concentration.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0049101