Reducing high carrier concentration in rocksalt-AlxSc1-xN with Mg acceptor doping

Aluminum scandium nitride (AlxSc1-xN) is an emerging III-nitride semiconductor that has attracted significant interest in recent years in surface and bulk acoustic resonators for its high piezoelectric coefficient and applications in high-power electronic devices. AlxSc1-xN stabilizes in the rock sa...

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Bibliographic Details
Published in:Applied physics letters 2021-05, Vol.118 (20)
Main Authors: Upadhya, Krithika, Rao, Dheemahi, Biswas, Bidesh, Kumar, Rajendra, Bhatia, Vijay, Pillai, Ashalatha Indiradevi Kamalasanan, Garbrecht, Magnus, Saha, Bivas
Format: Article
Language:English
Subjects:
Aluminum
Applied physics
Bulk acoustic wave devices
Carrier density
Chemical precipitation
Conduction bands
Crystal defects
Doping
Electronic devices
Energy conversion
Epitaxial growth
First principles
Magnesium
Metamaterials
Nitrides
Phase separation
Piezoelectricity
Scandium
Single crystals
Solid solutions
Substrates
Superlattices
Thermionic emission
Thin films
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Summary:Aluminum scandium nitride (AlxSc1-xN) is an emerging III-nitride semiconductor that has attracted significant interest in recent years in surface and bulk acoustic resonators for its high piezoelectric coefficient and applications in high-power electronic devices. AlxSc1-xN stabilizes in the rock salt phase for x 
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0052877