High and broadband sensitivity front-side illuminated InGaAs photo field-effect transistors (photoFETs) with SWIR transparent conductive oxide (TCO) gate

By using a transparent conductive oxide (TCO) gate for the short-wave infrared (SWIR) region, the high optical responsivity of 180 A/W at 1550 nm and the broadband photosensitivity up to 1800 nm are demonstrated in InGaAs photo field-effect transistors (photoFETs) with front-side illumination (FSI)....

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Bibliographic Details
Published in:Applied physics letters 2021-11, Vol.119 (19)
Main Authors: Maeda, Tatsuro, Oishi, Kazuaki, Ishii, Hiroyuki, Chang, Wen Hsin, Shimizu, Tetsuji, Endoh, Akira, Fujishiro, Hiroki, Koida, Takashi
Format: Article
Language:English
Subjects:
Applied physics
Broadband
Field effect transistors
Indium gallium arsenides
Optical communication
Photodiodes
Photosensitivity
Photovoltaic effect
Semiconductor devices
Short wave radiation
Transistors
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Summary:By using a transparent conductive oxide (TCO) gate for the short-wave infrared (SWIR) region, the high optical responsivity of 180 A/W at 1550 nm and the broadband photosensitivity up to 1800 nm are demonstrated in InGaAs photo field-effect transistors (photoFETs) with front-side illumination (FSI). The photoresponse of the InGaAs photoFETs through the TCO gate can be reasonably explained by the photovoltaic effect in the photoFET operation. It was found that the spectral responsivity characteristics of TCO gate InGaAs photoFETs exhibit higher and broader responsivity compared with those of the InGaAs photodiode. The TCO gate InGaAs photoFETs are the most promising architecture for a high responsivity and broadband SWIR FSI photodetector for monolithic integration with optical communication devices and Si-LSI.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0065776