The effect of GaN nanostructure layers on the toxic gas sensor sensitivity

In this paper, ammonia gas sensor based on Ag/GaN/ Si and Ag/GaN/PS with (3 and 7 layers) was fabricated; the effect of number of layers on the morphology, structural, and sensitivity of the device has been studied. XRD pattern for GaN/Si showed that the film has a polycrystalline structure in natur...

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Bibliographic Details
Main Authors: Mayoof, Mahmood H., Ramizy, Asmiet, Ali, Abdullah M., Mohammed, Abubaker S.
Format: Conference Proceeding
Language:English
Subjects:
Ammonia
Gallium nitrides
Gallium oxides
Gas sensors
Grain size
Morphology
Sensitivity
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Summary:In this paper, ammonia gas sensor based on Ag/GaN/ Si and Ag/GaN/PS with (3 and 7 layers) was fabricated; the effect of number of layers on the morphology, structural, and sensitivity of the device has been studied. XRD pattern for GaN/Si showed that the film has a polycrystalline structure in nature with presents many of diffraction peaks of hexagonal structure, with the exception of plane (111) at 39.09 which has a cubic structure, no other structures such as Ga2O3 is found, and these indicates that GaN output from the precursor was highly successful. FESEM images showed a change in surface morphology as the number of layers increases. from AFM technique, it’s found that reduced in particle size can significantly affect sensitivity improvement, therefore the maximum sensitivity to NH3 gas was observed in GaN/PS (3 layers) which possess the few grain size, and found to be 931 %, at 100°C.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0066091