Room temperature magnetic field modulation of diode-like behavior in Ca-doped BiFeO3 thin films

Bi1-xCaxFeO3 (x = 0, 0.1) thin films were synthesized by a sol-gel spin coating method. A diode-like current–voltage characteristic was investigated in a Bi0.9Ca0.1FeO3 (BCFO) thin film. By Ca element doping, the current–voltage characteristic was changed from a traditional symmetric variation to a...

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Bibliographic Details
Published in:Journal of applied physics 2022-04, Vol.131 (14)
Main Authors: Wu, Lei, Li, Juanfei, Dong, Chunhui, Wang, Xiaoqiang, Li, Jinsheng, Li, Mingya
Format: Article
Language:English
Subjects:
Applied physics
Current voltage characteristics
Electrons
Magnetic fields
Memory devices
Modulation
Photoelectrons
Room temperature
Silicon dioxide
Sol-gel processes
Spin coating
Thin films
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Summary:Bi1-xCaxFeO3 (x = 0, 0.1) thin films were synthesized by a sol-gel spin coating method. A diode-like current–voltage characteristic was investigated in a Bi0.9Ca0.1FeO3 (BCFO) thin film. By Ca element doping, the current–voltage characteristic was changed from a traditional symmetric variation to a diode-like behavior. Besides, the modulation effects of a magnetic field on Pt/BCFO/Pt/Ti/SiO2/Si devices have been investigated. Using some micro-analysis methods, such as x-ray photoelectron spectroscopy and transmission electron microscopy, possible mechanisms were discussed on the basis of an oxygen vacancy modulated Schottky-like barrier. The control of the resistance state with the magnetic field means larger degrees of freedom, and this is crucial for further application of BiFeO3-based materials in higher density memory devices.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0084403