Injection dependence of the local series resistance: Extending the illumination intensity variation method

Usually, the model of independent diodes is employed to determine the local series resistance from luminescence images. However, this model does not hold for Si solar cells. Here, a local series resistance theory, based on the illumination intensity variation method (IIVM), is presented and explaine...

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Bibliographic Details
Main Authors: Wagner, Jan-Martin, Carstensen, Jürgen, Adelung, Rainer
Format: Conference Proceeding
Language:English
Subjects:
Illumination
Photovoltaic cells
Solar cells
Online Access:Get full text
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Summary:Usually, the model of independent diodes is employed to determine the local series resistance from luminescence images. However, this model does not hold for Si solar cells. Here, a local series resistance theory, based on the illumination intensity variation method (IIVM), is presented and explained in detail. In this approach, the injection dependence of the lumped Rs is obtained explicitly; as in the experiment, Rs decreases for higher injection. We also present the analytic result for the injection dependence of the local series resistance, and we show that, as a consequence of being based on the IIVM, our method can also be applied to those mc-Si cells that are free from large defect clusters.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0089259