Alternative dielectrics for hole selective passivating contacts and the influence of nanolayer built-in charge

Highly passivating, hole selective contacts are required for future high efficiency silicon solar cells. This work investigates selected dielectrics as potential SiOx replacements to act as hole selective contacts. AlOx and SiNx were identified as good candidates due to their low valence band offset...

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Bibliographic Details
Main Authors: McNab, Shona, Yu, Mingzhe, Al-Dhahir, Isabel, Khorani, Edris, Rahman, Tasmiat, Boden, Stuart A., Altermatt, Pietro P., Wilshaw, Peter R., Bonilla, Ruy S.
Format: Conference Proceeding
Language:English
Subjects:
Conduction bands
Dielectrics
Mathematical analysis
Passivity
Photovoltaic cells
Pinholes
Selectivity
Silicon
Solar cells
Thickness
Valence band
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Summary:Highly passivating, hole selective contacts are required for future high efficiency silicon solar cells. This work investigates selected dielectrics as potential SiOx replacements to act as hole selective contacts. AlOx and SiNx were identified as good candidates due to their low valence band offsets to silicon and proven surface passivation capabilities. Simulated J-V curves show AlOx and SiNx maintain acceptable contact resistivities at thicknesses below 1.4 and 1.7 nm, respectively. The SiOx hole contact was found to become extremely resistive even at thicknesses
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0089282