Printable ion-gel-gated In2O3 synaptic transistor array for neuro-inspired memory

With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O...

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Bibliographic Details
Published in:Applied physics letters 2022-06, Vol.120 (23)
Main Authors: Jin, Chenxing, Liu, Wanrong, Huang, Yulong, Xu, Yunchao, Nie, Yiling, Zhang, Gengming, He, Pei, Sun, Jia, Yang, Junliang
Format: Article
Language:English
Subjects:
Aluminum oxide
Applied physics
Arrays
Electronic devices
Flash memory (computers)
High pass filters
Indium oxides
Nervous system
Plastic properties
Semiconductor devices
Synapses
Transistors
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Summary:With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O3 stacked gate dielectric, all devices on the array achieved a large hysteresis window of >1 V, a steep back sweep subthreshold swing of
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0092968