Printable ion-gel-gated In2O3 synaptic transistor array for neuro-inspired memory

With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O...

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Published in:Applied physics letters 2022-06, Vol.120 (23)
Main Authors: Jin, Chenxing, Liu, Wanrong, Huang, Yulong, Xu, Yunchao, Nie, Yiling, Zhang, Gengming, He, Pei, Sun, Jia, Yang, Junliang
Format: Article
Language:English
Subjects:
Aluminum oxide
Applied physics
Arrays
Electronic devices
Flash memory (computers)
High pass filters
Indium oxides
Nervous system
Plastic properties
Semiconductor devices
Synapses
Transistors
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cited_by cdi_FETCH-LOGICAL-c257t-f25ef135b8ad9482c4f1087f479170d52aa7c1a34f41d23f5eeb7d880231587f3
cites cdi_FETCH-LOGICAL-c257t-f25ef135b8ad9482c4f1087f479170d52aa7c1a34f41d23f5eeb7d880231587f3
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container_issue 23
container_start_page
container_title Applied physics letters
container_volume 120
creator Jin, Chenxing
Liu, Wanrong
Huang, Yulong
Xu, Yunchao
Nie, Yiling
Zhang, Gengming
He, Pei
Sun, Jia
Yang, Junliang
description With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O3 stacked gate dielectric, all devices on the array achieved a large hysteresis window of >1 V, a steep back sweep subthreshold swing of
doi_str_mv 10.1063/5.0092968
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fullrecord <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0092968</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2673692961</sourcerecordid><originalsourceid>FETCH-LOGICAL-c257t-f25ef135b8ad9482c4f1087f479170d52aa7c1a34f41d23f5eeb7d880231587f3</originalsourceid><addsrcrecordid>eNqd0E1LAzEQBuAgCtbqwX-w4EkhNR-bze5Rih-FQhX0HNLdpKS0yTrJCvvvTWnBu6eZgWdm4EXolpIZJRV_FDNCGtZU9RmaUCIl5pTW52hCCOG4agS9RFcxbvMoGOcT9PEOzie93pnCBY83Zoc3OpmuWHi24kUcve6Ta4sE2kcXU4BCA-ixsLnzZoCAnY-9g7yyN_sA4zW6sHoXzc2pTtHXy_Pn_A0vV6-L-dMSt0zIhC0TxlIu1rXumrJmbWkpqaUtZUMl6QTTWrZU89KWtGPcCmPWsqtrwjgV2fEpujve7SF8DyYmtQ0D-PxSsUry6pACzer-qFoIMYKxqge31zAqStQhMSXUKbFsH442ti7plPP4H_4J8AdV31n-C5GOeRk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2673692961</pqid></control><display><type>article</type><title>Printable ion-gel-gated In2O3 synaptic transistor array for neuro-inspired memory</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>American Institute of Physics</source><creator>Jin, Chenxing ; Liu, Wanrong ; Huang, Yulong ; Xu, Yunchao ; Nie, Yiling ; Zhang, Gengming ; He, Pei ; Sun, Jia ; Yang, Junliang</creator><creatorcontrib>Jin, Chenxing ; Liu, Wanrong ; Huang, Yulong ; Xu, Yunchao ; Nie, Yiling ; Zhang, Gengming ; He, Pei ; Sun, Jia ; Yang, Junliang</creatorcontrib><description>With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O3 stacked gate dielectric, all devices on the array achieved a large hysteresis window of &gt;1 V, a steep back sweep subthreshold swing of &lt;60 mV/decade, and a nonvolatile memory behavior, showing that the screen-printed ion-gel has satisfactory uniformity in large scale. In addition, short-term to long-term plasticity, paired-pulse facilitation, and spike-rate-dependent plasticity are simulated. Based on the plasticity regulated with the spike frequency, a high-pass filter was realized. Flash memory as a special memory model in the nervous system has been simulated in the array. This study provides a unique platform for designing high-performance, repeatable, and stable artificial synapses for the neuromorphic system.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0092968</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Aluminum oxide ; Applied physics ; Arrays ; Electronic devices ; Flash memory (computers) ; High pass filters ; Indium oxides ; Nervous system ; Plastic properties ; Semiconductor devices ; Synapses ; Transistors</subject><ispartof>Applied physics letters, 2022-06, Vol.120 (23)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c257t-f25ef135b8ad9482c4f1087f479170d52aa7c1a34f41d23f5eeb7d880231587f3</citedby><cites>FETCH-LOGICAL-c257t-f25ef135b8ad9482c4f1087f479170d52aa7c1a34f41d23f5eeb7d880231587f3</cites><orcidid>0000-0003-4423-8128 ; 0000-0001-8117-4157 ; 0000-0002-5553-0186</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0092968$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27924,27925,76255</link.rule.ids></links><search><creatorcontrib>Jin, Chenxing</creatorcontrib><creatorcontrib>Liu, Wanrong</creatorcontrib><creatorcontrib>Huang, Yulong</creatorcontrib><creatorcontrib>Xu, Yunchao</creatorcontrib><creatorcontrib>Nie, Yiling</creatorcontrib><creatorcontrib>Zhang, Gengming</creatorcontrib><creatorcontrib>He, Pei</creatorcontrib><creatorcontrib>Sun, Jia</creatorcontrib><creatorcontrib>Yang, Junliang</creatorcontrib><title>Printable ion-gel-gated In2O3 synaptic transistor array for neuro-inspired memory</title><title>Applied physics letters</title><description>With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O3 stacked gate dielectric, all devices on the array achieved a large hysteresis window of &gt;1 V, a steep back sweep subthreshold swing of &lt;60 mV/decade, and a nonvolatile memory behavior, showing that the screen-printed ion-gel has satisfactory uniformity in large scale. In addition, short-term to long-term plasticity, paired-pulse facilitation, and spike-rate-dependent plasticity are simulated. Based on the plasticity regulated with the spike frequency, a high-pass filter was realized. Flash memory as a special memory model in the nervous system has been simulated in the array. This study provides a unique platform for designing high-performance, repeatable, and stable artificial synapses for the neuromorphic system.</description><subject>Aluminum oxide</subject><subject>Applied physics</subject><subject>Arrays</subject><subject>Electronic devices</subject><subject>Flash memory (computers)</subject><subject>High pass filters</subject><subject>Indium oxides</subject><subject>Nervous system</subject><subject>Plastic properties</subject><subject>Semiconductor devices</subject><subject>Synapses</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNqd0E1LAzEQBuAgCtbqwX-w4EkhNR-bze5Rih-FQhX0HNLdpKS0yTrJCvvvTWnBu6eZgWdm4EXolpIZJRV_FDNCGtZU9RmaUCIl5pTW52hCCOG4agS9RFcxbvMoGOcT9PEOzie93pnCBY83Zoc3OpmuWHi24kUcve6Ta4sE2kcXU4BCA-ixsLnzZoCAnY-9g7yyN_sA4zW6sHoXzc2pTtHXy_Pn_A0vV6-L-dMSt0zIhC0TxlIu1rXumrJmbWkpqaUtZUMl6QTTWrZU89KWtGPcCmPWsqtrwjgV2fEpujve7SF8DyYmtQ0D-PxSsUry6pACzer-qFoIMYKxqge31zAqStQhMSXUKbFsH442ti7plPP4H_4J8AdV31n-C5GOeRk</recordid><startdate>20220606</startdate><enddate>20220606</enddate><creator>Jin, Chenxing</creator><creator>Liu, Wanrong</creator><creator>Huang, Yulong</creator><creator>Xu, Yunchao</creator><creator>Nie, Yiling</creator><creator>Zhang, Gengming</creator><creator>He, Pei</creator><creator>Sun, Jia</creator><creator>Yang, Junliang</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4423-8128</orcidid><orcidid>https://orcid.org/0000-0001-8117-4157</orcidid><orcidid>https://orcid.org/0000-0002-5553-0186</orcidid></search><sort><creationdate>20220606</creationdate><title>Printable ion-gel-gated In2O3 synaptic transistor array for neuro-inspired memory</title><author>Jin, Chenxing ; Liu, Wanrong ; Huang, Yulong ; Xu, Yunchao ; Nie, Yiling ; Zhang, Gengming ; He, Pei ; Sun, Jia ; Yang, Junliang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-f25ef135b8ad9482c4f1087f479170d52aa7c1a34f41d23f5eeb7d880231587f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Aluminum oxide</topic><topic>Applied physics</topic><topic>Arrays</topic><topic>Electronic devices</topic><topic>Flash memory (computers)</topic><topic>High pass filters</topic><topic>Indium oxides</topic><topic>Nervous system</topic><topic>Plastic properties</topic><topic>Semiconductor devices</topic><topic>Synapses</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jin, Chenxing</creatorcontrib><creatorcontrib>Liu, Wanrong</creatorcontrib><creatorcontrib>Huang, Yulong</creatorcontrib><creatorcontrib>Xu, Yunchao</creatorcontrib><creatorcontrib>Nie, Yiling</creatorcontrib><creatorcontrib>Zhang, Gengming</creatorcontrib><creatorcontrib>He, Pei</creatorcontrib><creatorcontrib>Sun, Jia</creatorcontrib><creatorcontrib>Yang, Junliang</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jin, Chenxing</au><au>Liu, Wanrong</au><au>Huang, Yulong</au><au>Xu, Yunchao</au><au>Nie, Yiling</au><au>Zhang, Gengming</au><au>He, Pei</au><au>Sun, Jia</au><au>Yang, Junliang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Printable ion-gel-gated In2O3 synaptic transistor array for neuro-inspired memory</atitle><jtitle>Applied physics letters</jtitle><date>2022-06-06</date><risdate>2022</risdate><volume>120</volume><issue>23</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O3 stacked gate dielectric, all devices on the array achieved a large hysteresis window of &gt;1 V, a steep back sweep subthreshold swing of &lt;60 mV/decade, and a nonvolatile memory behavior, showing that the screen-printed ion-gel has satisfactory uniformity in large scale. In addition, short-term to long-term plasticity, paired-pulse facilitation, and spike-rate-dependent plasticity are simulated. Based on the plasticity regulated with the spike frequency, a high-pass filter was realized. Flash memory as a special memory model in the nervous system has been simulated in the array. This study provides a unique platform for designing high-performance, repeatable, and stable artificial synapses for the neuromorphic system.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0092968</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0003-4423-8128</orcidid><orcidid>https://orcid.org/0000-0001-8117-4157</orcidid><orcidid>https://orcid.org/0000-0002-5553-0186</orcidid></addata></record>
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics
subjects Aluminum oxide
Applied physics
Arrays
Electronic devices
Flash memory (computers)
High pass filters
Indium oxides
Nervous system
Plastic properties
Semiconductor devices
Synapses
Transistors
title Printable ion-gel-gated In2O3 synaptic transistor array for neuro-inspired memory
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T21%3A03%3A14IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Printable%20ion-gel-gated%20In2O3%20synaptic%20transistor%20array%20for%20neuro-inspired%20memory&rft.jtitle=Applied%20physics%20letters&rft.au=Jin,%20Chenxing&rft.date=2022-06-06&rft.volume=120&rft.issue=23&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/5.0092968&rft_dat=%3Cproquest_scita%3E2673692961%3C/proquest_scita%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c257t-f25ef135b8ad9482c4f1087f479170d52aa7c1a34f41d23f5eeb7d880231587f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2673692961&rft_id=info:pmid/&rfr_iscdi=true