Self-selective analogue FeOx-based memristor induced by the electron transport in the defect energy level

A Fe2O3 film homojunction was orderly prepared by magnetron sputtering and a hydrothermal method. The Fe2O3 homojunction-based memristor exhibits an obvious self-selective effect as well as a typical analogue resistive switching (RS) memory behavior. A desirable self-rectifying voltage range (−1 to...

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Bibliographic Details
Published in:Applied physics letters 2022-09, Vol.121 (12)
Main Authors: Liao, Changrong, Hu, Xiaofang, Liu, Xiaoqin, Sun, Bai, Zhou, Guangdong
Format: Article
Language:English
Subjects:
Applied physics
Computer memory
Electron transport
Electron tunneling
Energy levels
Homojunctions
Magnetron sputtering
Memristors
Microprocessors
Potential barriers
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Summary:A Fe2O3 film homojunction was orderly prepared by magnetron sputtering and a hydrothermal method. The Fe2O3 homojunction-based memristor exhibits an obvious self-selective effect as well as a typical analogue resistive switching (RS) memory behavior. A desirable self-rectifying voltage range (−1 to 1 V), stable resistance ratio, good cycling endurance (>104 cycles), and long retention time (>104 s) can be obtained from the Fe2O3 homojunction-based memristor. Oxygen vacancies (Vo) are inevitably generated during the growth of the Fe2O3 film. The self-selective analogue RS memory behavior is ascribed to the electron tunneling behavior between the potential barrier generated by the FeOx contact and the electron filling dynamic in the Vo-based traps. This work provides a simple method to prepare a self-selective analogue memristor and lays the foundation for the core device of neuromorphic computing.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0102076