High-performance multiple-doped In2O3 transparent conductive oxide films in near-infrared light region

High-quality W, Mo, Ti, Zr, and Ga-doped indium oxide (multiple-doped In2O3) films are deposited at room temperature by direct current magnetron sputtering process under different oxygen proportion, with 200 °C annealing. A maximum Hall mobility of 71.6 cm2 V−1 s−1 is obtained at a middle oxygen pro...

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Bibliographic Details
Published in:Journal of applied physics 2022-10, Vol.132 (13)
Main Authors: Chen, Shuyi, Meng, Fanying, Shi, Jianhua, Yan, Zhu, Liu, Yiyang, Liu, Zhengxin
Format: Article
Language:English
Subjects:
Applied physics
Carrier density
Direct current
Electron mobility
Figure of merit
Hall effect
Indium oxides
Indium tin oxides
Magnetron sputtering
Molybdenum
Near infrared radiation
Optoelectronic devices
Oxide coatings
Oxygen
Room temperature
Titanium
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Summary:High-quality W, Mo, Ti, Zr, and Ga-doped indium oxide (multiple-doped In2O3) films are deposited at room temperature by direct current magnetron sputtering process under different oxygen proportion, with 200 °C annealing. A maximum Hall mobility of 71.6 cm2 V−1 s−1 is obtained at a middle oxygen proportion of 2%, thanks to the reduction of impurity scattering center, which is nearly three times higher than an ITO film of 23.6 cm2 V−1 s−1. The multiple-doped In2O3 films showed a remarkable 30% improvement of the optical transmittance (>80%) in the near-infrared (NIR) region compared to the ITO film (about 60%), which is mainly attributed to the decrement of free carrier absorption due to low carrier concentration (
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0103270