Loading…

Berry curvature induced antisymmetric in-plane magneto-transport in magnetic Weyl EuB6

In-plane transport properties, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE), are of great interest in electrical transport and spintronic applications. Unconventional transport behavior emerging from the topological physics has been intensively studied and very much des...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2022-10, Vol.121 (16)
Main Authors: Zeng, Qingqi, Yi, Changjiang, Shen, Jianlei, Wang, Binbin, Wei, Hongxiang, Shi, Youguo, Liu, Enke
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c327t-4abae64463db5a0680cdf88e53478de105fda02eb41d2dae554e212df4885f0b3
cites cdi_FETCH-LOGICAL-c327t-4abae64463db5a0680cdf88e53478de105fda02eb41d2dae554e212df4885f0b3
container_end_page
container_issue 16
container_start_page
container_title Applied physics letters
container_volume 121
creator Zeng, Qingqi
Yi, Changjiang
Shen, Jianlei
Wang, Binbin
Wei, Hongxiang
Shi, Youguo
Liu, Enke
description In-plane transport properties, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE), are of great interest in electrical transport and spintronic applications. Unconventional transport behavior emerging from the topological physics has been intensively studied and very much desired. In this study, a large AMR of −18% at a very low magnetic field of 0.2 T is observed in a soft magnetic Weyl semimetal EuB6 based on the characteristics of both high magnetization and large magnetoresistance. Furthermore, the intrinsic antisymmetric AMR and PHE are unambiguously observed and interpreted as the modification in conductivity owing to the Berry curvature in a tilted Weyl system instead of the out-of-plane magnetic field component. Our study provides a strategy for low-magnetic-field applications of large AMR and enriches the transport physics of spintronic devices.
doi_str_mv 10.1063/5.0114252
format article
fullrecord <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0114252</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2726132081</sourcerecordid><originalsourceid>FETCH-LOGICAL-c327t-4abae64463db5a0680cdf88e53478de105fda02eb41d2dae554e212df4885f0b3</originalsourceid><addsrcrecordid>eNp90EtLw0AQB_BFFKzVg98g4Elh676zHm2pDyh48XFcNtmJpDSbuLsp5Ns30qIHwdMw__kxA4PQJSUzShS_lTNCqWCSHaEJJXmOOaX6GE0IIRyrO0lP0VmM67GVjPMJep9DCENW9mFrUx8gq73rS3CZ9amOQ9NACnU5prjbWA9ZYz89pBanYH3s2pDG0SEc2QcMm2zZz9U5OqnsJsLFoU7R28PydfGEVy-Pz4v7FS45yxMWtrCghFDcFdISpUnpKq1BcpFrB5TIylnCoBDUMWdBSgGMMlcJrWVFCj5FV_u9XWi_eojJrNs--PGkYTlTlDOi6aiu96oMbYwBKtOFurFhMJSY77cZaQ5vG-3N3sayTjbVrf_B2zb8QtO56j_8d_MOne57rA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2726132081</pqid></control><display><type>article</type><title>Berry curvature induced antisymmetric in-plane magneto-transport in magnetic Weyl EuB6</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP Journals (American Institute of Physics)</source><creator>Zeng, Qingqi ; Yi, Changjiang ; Shen, Jianlei ; Wang, Binbin ; Wei, Hongxiang ; Shi, Youguo ; Liu, Enke</creator><creatorcontrib>Zeng, Qingqi ; Yi, Changjiang ; Shen, Jianlei ; Wang, Binbin ; Wei, Hongxiang ; Shi, Youguo ; Liu, Enke</creatorcontrib><description>In-plane transport properties, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE), are of great interest in electrical transport and spintronic applications. Unconventional transport behavior emerging from the topological physics has been intensively studied and very much desired. In this study, a large AMR of −18% at a very low magnetic field of 0.2 T is observed in a soft magnetic Weyl semimetal EuB6 based on the characteristics of both high magnetization and large magnetoresistance. Furthermore, the intrinsic antisymmetric AMR and PHE are unambiguously observed and interpreted as the modification in conductivity owing to the Berry curvature in a tilted Weyl system instead of the out-of-plane magnetic field component. Our study provides a strategy for low-magnetic-field applications of large AMR and enriches the transport physics of spintronic devices.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0114252</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Curvature ; Hall effect ; Magnetic fields ; Magnetic properties ; Magnetoresistance ; Magnetoresistivity ; Transport phenomena ; Transport properties</subject><ispartof>Applied physics letters, 2022-10, Vol.121 (16)</ispartof><rights>Author(s)</rights><rights>2022 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c327t-4abae64463db5a0680cdf88e53478de105fda02eb41d2dae554e212df4885f0b3</citedby><cites>FETCH-LOGICAL-c327t-4abae64463db5a0680cdf88e53478de105fda02eb41d2dae554e212df4885f0b3</cites><orcidid>0000-0002-5498-993X ; 0000-0002-6924-6354</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0114252$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,778,780,791,27901,27902,76126</link.rule.ids></links><search><creatorcontrib>Zeng, Qingqi</creatorcontrib><creatorcontrib>Yi, Changjiang</creatorcontrib><creatorcontrib>Shen, Jianlei</creatorcontrib><creatorcontrib>Wang, Binbin</creatorcontrib><creatorcontrib>Wei, Hongxiang</creatorcontrib><creatorcontrib>Shi, Youguo</creatorcontrib><creatorcontrib>Liu, Enke</creatorcontrib><title>Berry curvature induced antisymmetric in-plane magneto-transport in magnetic Weyl EuB6</title><title>Applied physics letters</title><description>In-plane transport properties, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE), are of great interest in electrical transport and spintronic applications. Unconventional transport behavior emerging from the topological physics has been intensively studied and very much desired. In this study, a large AMR of −18% at a very low magnetic field of 0.2 T is observed in a soft magnetic Weyl semimetal EuB6 based on the characteristics of both high magnetization and large magnetoresistance. Furthermore, the intrinsic antisymmetric AMR and PHE are unambiguously observed and interpreted as the modification in conductivity owing to the Berry curvature in a tilted Weyl system instead of the out-of-plane magnetic field component. Our study provides a strategy for low-magnetic-field applications of large AMR and enriches the transport physics of spintronic devices.</description><subject>Applied physics</subject><subject>Curvature</subject><subject>Hall effect</subject><subject>Magnetic fields</subject><subject>Magnetic properties</subject><subject>Magnetoresistance</subject><subject>Magnetoresistivity</subject><subject>Transport phenomena</subject><subject>Transport properties</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp90EtLw0AQB_BFFKzVg98g4Elh676zHm2pDyh48XFcNtmJpDSbuLsp5Ns30qIHwdMw__kxA4PQJSUzShS_lTNCqWCSHaEJJXmOOaX6GE0IIRyrO0lP0VmM67GVjPMJep9DCENW9mFrUx8gq73rS3CZ9amOQ9NACnU5prjbWA9ZYz89pBanYH3s2pDG0SEc2QcMm2zZz9U5OqnsJsLFoU7R28PydfGEVy-Pz4v7FS45yxMWtrCghFDcFdISpUnpKq1BcpFrB5TIylnCoBDUMWdBSgGMMlcJrWVFCj5FV_u9XWi_eojJrNs--PGkYTlTlDOi6aiu96oMbYwBKtOFurFhMJSY77cZaQ5vG-3N3sayTjbVrf_B2zb8QtO56j_8d_MOne57rA</recordid><startdate>20221017</startdate><enddate>20221017</enddate><creator>Zeng, Qingqi</creator><creator>Yi, Changjiang</creator><creator>Shen, Jianlei</creator><creator>Wang, Binbin</creator><creator>Wei, Hongxiang</creator><creator>Shi, Youguo</creator><creator>Liu, Enke</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5498-993X</orcidid><orcidid>https://orcid.org/0000-0002-6924-6354</orcidid></search><sort><creationdate>20221017</creationdate><title>Berry curvature induced antisymmetric in-plane magneto-transport in magnetic Weyl EuB6</title><author>Zeng, Qingqi ; Yi, Changjiang ; Shen, Jianlei ; Wang, Binbin ; Wei, Hongxiang ; Shi, Youguo ; Liu, Enke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c327t-4abae64463db5a0680cdf88e53478de105fda02eb41d2dae554e212df4885f0b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>Applied physics</topic><topic>Curvature</topic><topic>Hall effect</topic><topic>Magnetic fields</topic><topic>Magnetic properties</topic><topic>Magnetoresistance</topic><topic>Magnetoresistivity</topic><topic>Transport phenomena</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zeng, Qingqi</creatorcontrib><creatorcontrib>Yi, Changjiang</creatorcontrib><creatorcontrib>Shen, Jianlei</creatorcontrib><creatorcontrib>Wang, Binbin</creatorcontrib><creatorcontrib>Wei, Hongxiang</creatorcontrib><creatorcontrib>Shi, Youguo</creatorcontrib><creatorcontrib>Liu, Enke</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zeng, Qingqi</au><au>Yi, Changjiang</au><au>Shen, Jianlei</au><au>Wang, Binbin</au><au>Wei, Hongxiang</au><au>Shi, Youguo</au><au>Liu, Enke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Berry curvature induced antisymmetric in-plane magneto-transport in magnetic Weyl EuB6</atitle><jtitle>Applied physics letters</jtitle><date>2022-10-17</date><risdate>2022</risdate><volume>121</volume><issue>16</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>In-plane transport properties, including anisotropic magnetoresistance (AMR) and planar Hall effect (PHE), are of great interest in electrical transport and spintronic applications. Unconventional transport behavior emerging from the topological physics has been intensively studied and very much desired. In this study, a large AMR of −18% at a very low magnetic field of 0.2 T is observed in a soft magnetic Weyl semimetal EuB6 based on the characteristics of both high magnetization and large magnetoresistance. Furthermore, the intrinsic antisymmetric AMR and PHE are unambiguously observed and interpreted as the modification in conductivity owing to the Berry curvature in a tilted Weyl system instead of the out-of-plane magnetic field component. Our study provides a strategy for low-magnetic-field applications of large AMR and enriches the transport physics of spintronic devices.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0114252</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-5498-993X</orcidid><orcidid>https://orcid.org/0000-0002-6924-6354</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 2022-10, Vol.121 (16)
issn 0003-6951
1077-3118
language eng
recordid cdi_scitation_primary_10_1063_5_0114252
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP Journals (American Institute of Physics)
subjects Applied physics
Curvature
Hall effect
Magnetic fields
Magnetic properties
Magnetoresistance
Magnetoresistivity
Transport phenomena
Transport properties
title Berry curvature induced antisymmetric in-plane magneto-transport in magnetic Weyl EuB6
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T03%3A15%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Berry%20curvature%20induced%20antisymmetric%20in-plane%20magneto-transport%20in%20magnetic%20Weyl%20EuB6&rft.jtitle=Applied%20physics%20letters&rft.au=Zeng,%20Qingqi&rft.date=2022-10-17&rft.volume=121&rft.issue=16&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/5.0114252&rft_dat=%3Cproquest_scita%3E2726132081%3C/proquest_scita%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c327t-4abae64463db5a0680cdf88e53478de105fda02eb41d2dae554e212df4885f0b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2726132081&rft_id=info:pmid/&rfr_iscdi=true