The effect of DC magnetron sputtering power to the growth of Cu2ZnSnS4 (CZTS) thin film

• Main Authors: Fianti, Sari, Nabila Rizkina, Mulia, Shila Artha, Putra, Ngurah Made Darma, Sulistyaningsih, Triastuti, Sugianto, Marwoto, Putut
• Format: Conference Proceeding
• Language: English
• Subjects: Absorptivity; Copper sulfides; Copper zinc tin sulfide; Energy gap; Energy value; Grain size; Magnetic properties; Magnetron sputtering; Optical properties; P-type semiconductors; Photovoltaic cells; Solar cells; Structural analysis; Thin films
• ISSN: 0094-243X; 1551-7616
• DOI: 10.1063/5.0125973

Kesterite-type CZTS (Cu2ZnSnS4) is an alternative semiconductor absorber material to be used in thin film solar cells. CZTS is a potential p-type semiconductor for photovoltaic applications with the advantage of being made from materials which are abundant in nature and have a high absorption coefficient value. The research aims to determine the effect of plasma power on the composition, structure, morphology and optical properties of the film. CZTS film were prepared by DC Magnetron Sputtering method at 400 °C with CZTS pellets for 7 hours at a plasma power of 28 W, 30 W and 42 W. The CZTS thin films were characterized by XRD, UV-Vis-NIR, and SEM-EDX. XRD characterization showed the structure films of kesterite crystals with secondary phases SnS2, ZnS and Cu2S. The EDX characterization produces Cu-poor film which is a p-type semiconductor. SEM were showed that the higher plasma power, had a larger grain size. Based on the UV-Vis-NIR results, all the CZTS thin films grown were able to absorb the entire visible light spectrum at a wavelength of more than 350 nm with a band gap energy value of 1.4-1.9 eV with an absorption coefficient of 4-6 × 104 cm−1.