Electron-beam–controlled deflection of near-infrared laser in semiconductor plasma

A timing method for experiments on the interaction of a near-infrared laser and an ultra-relativistic electron beam via a semiconductor plasma switch is experimentally validated. As an intermediate medium, a thin Si plate is excited by the energetic, intense electron beam to produce a semiconductor...

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Bibliographic Details
Published in:Journal of applied physics 2023-04, Vol.133 (14)
Main Authors: Sakai, Y., Williams, O. B., Fukasawa, A., Murokh, A., Kupfer, R., Kusche, K., Fedurin, M., Pogorelsky, I., Polyanskiy, M., Babzien, M., Palmer, M., Rosenzweig, J. B.
Format: Article
Language:English
Subjects:
Applied physics
Deflection
Elastic scattering
Infrared lasers
Neodymium lasers
Relativistic electron beams
Semiconductor lasers
Semiconductor plasmas
YAG lasers
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Summary:A timing method for experiments on the interaction of a near-infrared laser and an ultra-relativistic electron beam via a semiconductor plasma switch is experimentally validated. As an intermediate medium, a thin Si plate is excited by the energetic, intense electron beam to produce a semiconductor plasma, which in turn deflects counter-colliding laser light having 1 μm wavelength. An electron beam of sub-nC charge sufficiently induces the needed electron number density gradient of 1 × 1020 cm−3 per tens of μm length at the interaction point. Demonstration during an inverse Compton scattering experiment by a counter-colliding electron beam of 300 pC and 70 MeV with an Nd: YAG laser at a wavelength of 1 μm is reported.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0146255