Improved method for radiation degradation studying of concentrated solar radiation converter subcells based on AIIIBV/Ge compounds

• Main Authors: Voevodkin, G. S., Ryabtseva, M. V., Badurin, I. V., Vagapova, N. T., Loginova, E. S., Tapero, K. I., Petrov, A. S.
• Format: Conference Proceeding
• Language: English
• Subjects: Current carriers; Degradation; Diffusion length; Electron irradiation; Fluence; Indium gallium arsenides; Maximum power; Open circuit voltage; Optoelectronics; Quantum efficiency; Radiation; Reciprocity; Semiconductor materials; Short circuit currents; Solar radiation; Spectra
• ISSN: 0094-243X; 1551-7616
• DOI: 10.1063/5.0151008

This paper presents the results of a study of the output electrical and spectral characteristics of subcells of concentrated solar radiation (CSR) converters based on semiconductor materials with the InGaP/InGaAs/Ge before and after electron irradiation with an energy of 7 MeV and a fluence 3×1012 cm−2, 3×1013 cm-2 and 1×1015 cm-2. The spectra of the external quantum efficiency (EQE) and electroluminescence (EL) spectra of the multi-junction CSR converters were analyzed. The degradation curves of the main electrical parameters of the CSR converters were obtained and analyzed: short-circuit current density JSC, open-circuit voltage VOC, maximum power Pmax and efficiency. The change in the diffusion length of the minority charge carrier (CC) of the semiconductor materials of the CSR converter subcells due to electron irradiation was also considered. An improved method for calculating the open-circuit voltage for each subcell of the converter using the optoelectronic spectral reciprocity ratio was proposed and tested. It was shown that despite the greatest current degradation of the Ge subcell as a result of irradiation at a fluence of 1×1015 cm−2, the InGaAs subcell makes the greatest contribution to the power degradation of the device in question.