Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111)

Site- and polarity-controlled core–shell InGaN/GaN nanorod LED structures were grown by metal organic vapor phase epitaxy on Si(111). Scanning transmission electron microscope images reveal uniform multiple quantum wells on polarization-free sidewalls. Spatially resolved photoluminescence mapping on...

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Bibliographic Details
Published in:Journal of applied physics 2023-07, Vol.134 (4)
Main Authors: Meier, Johanna, Häuser, Patrick, Blumberg, Christian, Smola, Tim, Prost, Werner, Weimann, Nils, Bacher, Gerd
Format: Article
Language:English
Subjects:
Applied physics
Augers
Carrier recombination
Epitaxial growth
Excitation
Gallium nitrides
Indium gallium nitrides
Light emitting diodes
Low temperature
Multi Quantum Wells
Nanorods
Photoluminescence
Polarization
Radiative recombination
Silicon substrates
Vapor phase epitaxy
Vapor phases
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Summary:Site- and polarity-controlled core–shell InGaN/GaN nanorod LED structures were grown by metal organic vapor phase epitaxy on Si(111). Scanning transmission electron microscope images reveal uniform multiple quantum wells on polarization-free sidewalls. Spatially resolved photoluminescence mapping on a single nanorod demonstrates that the emission at 3.0 eV stems from the polarization-free m-plane, which is supported by a fast recombination lifetime of ∼490 ps at low temperatures. Quasi-resonant laser excitation demonstrates predominant radiative recombination at low excitation densities, whereas at high excitation densities, the efficiency is lowered by Auger recombination and/or carrier leakage.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0153713