Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

We report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron...

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Bibliographic Details
Published in:Applied physics letters 2023-07, Vol.123 (3)
Main Authors: Ho, Wan Ying, Johnson, Cameron W., Tak, Tanay, Sauty, Mylène, Chow, Yi Chao, Nakamura, Shuji, Schmid, Andreas, Peretti, Jacques, Weisbuch, Claude, Speck, James S.
Format: Article
Language:English
Subjects:
Applied physics
Cesium
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Current distribution
Electron affinity
Electron emission
Electron microscopy
Emission microscopy
Exact solutions
Gallium nitrides
Negative electron affinity
Physics
Spatial distribution
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Summary:We report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron affinity, allowing overflow electrons at the surface of the biased diodes to be emitted and their spatial distribution imaged. The results were compared to the literature, and a good match with analytical solutions by Joyce and Wemple [J. Appl. Phys. 41, 3818 (1970)] was obtained.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0153947