Study of silicon material MOS with low threshold potential

In this paper, some changes carried out in the LDMOS known as MOSFET1 by utilizing trench known as MOSFET2. In the proposed device silicon material acts as channel material and the gate electrode is placed in oxide trenches. The drain contact is positioned at the centre and the sources are located a...

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Bibliographic Details
Main Authors: Adhikari, Manoj Singh, Verma, Yogesh Kumar, Suman, Subhash
Format: Conference Proceeding
Language:English
Subjects:
Channels
Electric potential
Silicon
Voltage
Online Access:Get full text
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Summary:In this paper, some changes carried out in the LDMOS known as MOSFET1 by utilizing trench known as MOSFET2. In the proposed device silicon material acts as channel material and the gate electrode is placed in oxide trenches. The drain contact is positioned at the centre and the sources are located at the edges. In the MOSFET2, two gates creating the two channels. Channels acts together so produce large gain, current, and voltage need for the power IC. An extension in breakdown occurs due to the RESURF in MOSFET2. With the help of simulator the performance are analysed with that of the MOSFET1. The MOSFET2 gives 111% improvement in gain, 12% decrease the threshold-voltage, 2 times higher output current in comparison with the MOSFET1. The performance of the MOSFETs is investigated by device simulator ATLAS. The proposed device is suitable for analog applications.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0164913