Electrical gating of superconducting NbSe2 using SrTiO3-based field-effect transistors

We report on electrical gating of superconducting bilayer NbSe2 using dual-gate field-effect transistors constructed by the van der Waals assembly of mechanically exfoliated NbSe2 and SrTiO3 thin films grown by molecular beam epitaxy. Charge carrier doping, but not a pure electric field, was found t...

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Bibliographic Details
Published in:Applied physics letters 2023-09, Vol.123 (13)
Main Authors: Fang, Zhi, Tao, Zui, Sun, Haoying, Lv, Yang-Yang, Chen, Yan-Bin, Nie, Yuefeng, Liu, Ronghua, Xi, Xiaoxiang
Format: Article
Language:English
Subjects:
Applied physics
Bilayers
Critical temperature
Current carriers
Electric fields
Epitaxial growth
Field effect transistors
Ising model
Molecular beam epitaxy
Semiconductor devices
Spin-orbit interactions
Strontium titanates
Superconductivity
Superconductors
Thin films
Transition temperature
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Summary:We report on electrical gating of superconducting bilayer NbSe2 using dual-gate field-effect transistors constructed by the van der Waals assembly of mechanically exfoliated NbSe2 and SrTiO3 thin films grown by molecular beam epitaxy. Charge carrier doping, but not a pure electric field, was found to induce changes to the superconducting resistive transition, reaching a 190 mK modulation of the critical temperature and excluding the Rashba effect. The phase space for the superconducting state beyond the Pauli limit under in-plane magnetic fields expands when the critical temperature is enhanced. Quantitative comparison with theory suggests the presence of intervalley scattering, which competes with Ising spin–orbit coupling to set the superconducting-normal phase boundary. The gating method demonstrated here may be applied to study other van der Waals layered superconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0167361