Bipolar magnetic semiconductor and doping controllable spin transport property in 2D CoI2/MnBr2 heterostructure

The integration of two-dimensional heterostructure materials remains a fundamental way for the manipulation of spintronics in practical applications. Here, we predicted the transform of stripy antiferromagnetic (AFM) CoI2 and MnBr2 monolayers to interlayer AFM CoI2/MnBr2 heterostructure with intrala...

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Bibliographic Details
Published in:Applied physics letters 2024-02, Vol.124 (6)
Main Authors: Guo, Tianxia, Xu, Xiaokang, Zhang, Huiyang, Xie, Yue, Yang, Huanning, Rui, Xue, Sun, Yi, Yao, Xiaojing, Wang, Bing, Zhang, Xiuyun
Format: Article
Language:English
Subjects:
Antiferromagnetism
Controllability
Density functional theory
Doping
Ferromagnetism
Heterostructures
Information storage
Interlayers
Magnetic properties
Magnetic semiconductors
Metal/semiconductor transitions
Polarization (spin alignment)
Spintronics
Transport properties
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Summary:The integration of two-dimensional heterostructure materials remains a fundamental way for the manipulation of spintronics in practical applications. Here, we predicted the transform of stripy antiferromagnetic (AFM) CoI2 and MnBr2 monolayers to interlayer AFM CoI2/MnBr2 heterostructure with intralayer ferromagnetic orders by using density functional theory. Interestingly, the CoI2/MnBr2 heterostructure exhibits a typical bipolar magnetic semiconducting state with type-I band alignments. Moreover, the half-metal/semiconductor transition and spin-up/spin-down polarization switching in CoI2/MnBr2 heterostructure can be effectively triggered by electron/hole doping. Our study provides the potential of AFM spintronics for information storage and processing.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0172966