Magnetic and transport properties of GdBi single crystal

Single crystal of binary compound crystallizing in the space group Fm3̅m has been grown by flux method. The crystals are of high quality with residual resistivity ratio value 80. Magnetic and electrical transport studies have been performed on well oriented single crystal. Antiferromagnetic ordering...

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Bibliographic Details
Main Authors: Dwari, Gourav, Sasmal, Souvik, Maity, Bishal, Kulkarni, Ruta, Thamizhavel, Arumugam
Format: Conference Proceeding
Language:English
Subjects:
Antiferromagnetism
Electrical resistivity
Low temperature
Magnetic permeability
Magnetic properties
Magnetic transitions
Residual resistivity
Resistivity ratio
Single crystals
Transport properties
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Summary:Single crystal of binary compound crystallizing in the space group Fm3̅m has been grown by flux method. The crystals are of high quality with residual resistivity ratio value 80. Magnetic and electrical transport studies have been performed on well oriented single crystal. Antiferromagnetic ordering is observed in this compound at 27.5 K. Another magnetic transition may occur at sub-2K temperature indicated by increasing behavior of magnetic susceptibility. Zero field resistivity shows normal metal-like behavior above the ordering temperature. Low temperature resistivity, however, shows metal to insulator like upturn behavior in presence of high magnetic field. This study reveals that the high field low temperature resistivity behavior is metallic rather than insulating.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0180325