Field-free spin–orbit torque-induced switching of perpendicular magnetization at room temperature in WTe2/ferromagnet heterostructures

• Published in: Applied physics letters 2023-12, Vol.123 (25)
• Main Authors: Wei, Lujun, Yin, Xiaomiao, Liu, Pai, Zhang, Pengchao, Niu, Wei, Liu, Ping, Yang, Jiajv, Peng, Jincheng, Huang, Fei, Liu, Ruobai, Chen, Jiarui, Chen, lina, Zhou, Shuang, Li, Feng, Niu, Xianghong, Du, Jun, Pu, Yong
• Format: Article
• Language: English
• Subjects: Applied physics; Bilayers; Cobalt; Ferromagnetism; Heterostructures; Magnetic fields; Magnetic switching; Magnetization; Multilayers; Platinum; Room temperature; Torque; Two dimensional materials
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/5.0185559

Spin–orbit torque provides an efficient way to achieve switching of perpendicular magnetization, which is essential for designing energy-efficient spintronic devices. An in-plane antidamping torque combined with an out-of-plane antidamping torque can often deterministically switch perpendicular magnetization without an external magnetic field. Encouragingly, field-free perpendicular magnetization switching of a two-dimensional (2D) material WTe2/ferromagnet bilayer has been reported recently, but the working temperature (< 200 K) is quite below room temperature. Here, we demonstrate field-free perpendicular magnetization switching in the Pt/Co/Pt/WTe2 multilayer films at room temperature, which is mainly attributed to the out-of-plane antidamping torque originating from the WTe2 layer. In addition, current-induced perpendicular magnetization switching at zero magnetic field is also accomplished in the [Co/Pt]2/WTe2 multilayer film with a very large perpendicular magnetic anisotropic field (∼13 600 Oe), which is very useful for practical applications. This work offers a potential way to develop spintronic devices based on 2D materials at room temperature.