Spectroscopy of monolayer and multilayer tungsten disulfide under high pressure

• Published in: Applied physics letters 2024-01, Vol.124 (3)
• Main Authors: Luo, JieHuan, Li, ChenKai, Liu, JingYi, Liu, YaoYao, Xiao, WeiHeng, Zheng, RongHao, Zheng, Qunfei, Han, Jun, Zou, Tong, Cheng, WenJing, Yao, XiaoDong, Liu, Ying, Zhu, Jinlong
• Format: Article
• Language: English
• Subjects: Applied physics; Banded structure; Bilayers; Carrier mobility; Energy bands; Energy gap; Interlayers; Layered materials; Monolayers; Multilayers; Phase transitions; Photoluminescence; Spectrum analysis; Transition metal compounds; Tungsten disulfide
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/5.0188140

Recently exfoliated monolayer and multilayered transition metal dichalcogenides have gathered significant interest based on their tunable bandgap and extremely high carrier mobility. We have investigated the Raman and photoluminescence spectra of monolayer and multilayer WS2 as a function of pressure. The Raman-inactive mode B1u, which is activated by structural disorder, was revealed at 6.7 GPa in monolayers, at 8.0 GPa in bilayers, and at 13.7 GPa in multilayers, respectively. With the enhancement of pressure-induced interlayer interaction, the crystal phase transition due to layer sliding like 2Hc to 2Ha occurs at 14.8 and 18.7 GPa in bilayers and multilayers, as evidenced by the split of E12g and B1u. The electronic phase transition of the monolayer is supposed to be a direct K-K bandgap changing to an indirect Λ-K bandgap at 2.6 GPa. These observations contribute to a better understanding of the impact of interlayer interactions on the modulation of WS2 energy bands and structure, as well as fundamental studies of two-dimensional layered materials, which can inform the development of device applications.