Comparison of current-voltage characteristics for the nanoscale organofunctional silane such as OTS and HMDS based semiconductor channel for Pi-gate FinFET

• Main Authors: Vikas, M., Lakshmi, S. Vidhya, Azariah, J. Cyril Robinson
• Format: Conference Proceeding
• Language: English
• Subjects: Current voltage characteristics; Thickness
• ISSN: 0094-243X; 1551-7616
• DOI: 10.1063/5.0197390

The purpose of this research is to simulate, investigate, and compare the current and voltage characteristics of the drain current for the nanolayer-based pi-gateFinFETs based on octadecyltrichlorosilane (OTS) and hexamethyldisilazane (HMDS), as well as to stop an excessive amount of current from leaking out. Materials and Methods: There are two groups that will be considered for this study, and the sample size for each group will be 26 people. The pretest power will be set at 80 percent, and the error rate will be 0.05. In the analysis of the results, both the current and voltage characteristics of the pi-gate FinFET as well as the drain currents were subjected to statistical comparison. At an oxide thickness of 1 nm, the drain current of an HMDS-based pi-gate FinFET was found to be 6.59E-06 A, and at an oxide thickness of 2 nm, the drain current was found to be 3.83E-4 A. On the other hand, the drain current of an OTS-based pi-gate FET was found to be 7.27E-07 A, and at an oxide thickness of 2 nm, it was found to be 3.96E-6 A. The HMDS drain current is noticeably greater than the OTS-based pi-Gate FinFET drain current.