Efficient effect of deep levels on the photoelectric properties of a heterostructure based on p CdTe – n CdS and p CdTe – n CdSe

Photoelectric and current-voltage characteristics of solar elements based on heterojunctions of p-CdTe-n-CdS and p-CdTe-n-CdSe pellicles with deep impurity level are considered in the article. It is noted that the photosensitivity of heterostructures is significantly improved when Ag and Cu alloys a...

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Bibliographic Details
Main Authors: Otajonov, Salim, Ergashev, Ravshanbek, Shuxratov, Sharof, Botirov, Kadir, Usmonov, Yakub, Baxromov, Mansur
Format: Conference Proceeding
Language:English
Subjects:
Cadmium selenides
Cadmium sulfide
Cadmium tellurides
Copper base alloys
Current voltage characteristics
Heterojunctions
Heterostructures
Impurities
Infrared radiation
Intermetallic compounds
Photoelectric effect
Photoelectricity
Photosensitivity
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Summary:Photoelectric and current-voltage characteristics of solar elements based on heterojunctions of p-CdTe-n-CdS and p-CdTe-n-CdSe pellicles with deep impurity level are considered in the article. It is noted that the photosensitivity of heterostructures is significantly improved when Ag and Cu alloys are added to CdTe pellicles and approaches the infrared region of the spectrum. Clearly, the deep impurity level in CdTe has an activation energy equal to Ec=1,15 eV.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0197628