Structural characterization of threading dislocation in α-Ga2O3 thin films on c- and m-plane sapphire substrates

We discuss the structure of threading dislocations in α-Ga2O3 thin films grown on c- and m-plane sapphire substrates. The thickness-dependent threading dislocation density in both films directly affects the electrical properties of the films including carrier concentration and mobility. Two distinct...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2024-07, Vol.136 (2)
Main Authors: Takane, Hitoshi, Konishi, Shinya, Hayasaka, Yuichiro, Ota, Ryo, Wakamatsu, Takeru, Isobe, Yuki, Kaneko, Kentaro, Tanaka, Katsuhisa
Format: Article
Language:English
Subjects:
Carrier density
Dislocation density
Dislocation mobility
Electrical properties
Gallium oxides
Sapphire
Structural analysis
Substrates
Thickness
Thin films
Threading dislocations
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We discuss the structure of threading dislocations in α-Ga2O3 thin films grown on c- and m-plane sapphire substrates. The thickness-dependent threading dislocation density in both films directly affects the electrical properties of the films including carrier concentration and mobility. Two distinct types of threading dislocations are identified for each of the c- and m-plane α-Ga2O3 thin films. The c-plane α-Ga2O3 thin film shows Burgers vectors of 1 / 3 [ 1 1 ¯ 01 ] and 1 / 3 [ 11 2 ¯ 0 ], while the m-plane α-Ga2O3 thin film displays Burgers vectors of 1 / 3 [ 2 1 ¯ 1 ¯ 0 ] and 1 / 3 [ 1 1 ¯ 01 ]. This paper presents a detailed structure of the threading dislocations in α-Ga2O3, which has been little disclosed thus far mainly due to the difficulty in synthesizing the metastable α-Ga2O3.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0206863