Advances in high thermal conductivity cubic boron arsenide: Pioneering research and future horizons

This study marks a pioneering exploration into emerging semiconductor materials, with a primary focus on cubic boron arsenide (c-BAs). The research has predominantly examined carrier diffusion dynamics, offering insights into carrier motion devoid of an electric field's influence. The ensuing s...

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Bibliographic Details
Main Author: Tan, Ziang
Format: Conference Proceeding
Language:English
Subjects:
Arsenides
Boron
Commercialization
Electric fields
Electrical properties
Intermetallic compounds
Semiconductor devices
Semiconductor materials
Thermal conductivity
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Summary:This study marks a pioneering exploration into emerging semiconductor materials, with a primary focus on cubic boron arsenide (c-BAs). The research has predominantly examined carrier diffusion dynamics, offering insights into carrier motion devoid of an electric field's influence. The ensuing scientific pursuit will delve into the intricate electrical properties of c-BAs, scrutinizing carrier behavior under the impact of electric fields, and aims to empirically validate the material's predicted outstanding electrical attributes. It is important to acknowledge that this ongoing research is both promising and actively evolving. While significant progress has been made, c-BAs' production and preparation remain at the laboratory level, and the quality and output are works in progress. The transition to large-scale commercialization poses multifaceted challenges and uncertainties. The journey towards realizing c-BAs' practical applications in semiconductor devices presents an exciting avenue for future research, punctuated by ongoing investigations and uncharted pathways.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0214663