Germanium surface segregation in highly doped Ge:β-Ga2O3 grown by molecular beam epitaxy observed by synchrotron radiation hard x-ray photoelectron spectroscopy

We present a study of Ge segregation at the surface of highly germanium-doped gallium oxide (2.5 × 1020 cm−3 nominal doping level) grown by molecular beam epitaxy. We probed the dopant concentration as a function of depth by hard x-ray photoelectron spectroscopy and standard laboratory photoemission...

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Bibliographic Details
Published in:Applied physics letters 2024-11, Vol.125 (19)
Main Authors: Boucly, Anthony, Back, Tyson C., Asel, Thaddeus J., Noesges, Brenton A., Evans, Prescott E., Weiland, Conan, Barrett, Nick
Format: Article
Language:English
Subjects:
Dopants
Doping
Epitaxial growth
Gallium oxides
Germanium
Molecular beam epitaxy
Photoelectric emission
Photoelectrons
Physics
Synchrotron radiation
X ray photoelectron spectroscopy
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Summary:We present a study of Ge segregation at the surface of highly germanium-doped gallium oxide (2.5 × 1020 cm−3 nominal doping level) grown by molecular beam epitaxy. We probed the dopant concentration as a function of depth by hard x-ray photoelectron spectroscopy and standard laboratory photoemission spectroscopy. We notably found that there is germanium segregation within the top 2 nm where its concentration is 3 times the nominal doping level. This increased dopant concentration leads to a threefold enhancement of surface conductivity. The results suggest a reliable method for delta doping for power electronics applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0220212