Loading…
Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli
The synaptic response of ZnO/HfZrO memristor devices to electrical stimuli was studied. It was found that the frequency of the stimuli affects the rate of current increase, which can be explained by the cluster state of oxygen vacancies at the interface of ZnO/HfZrO. This variation in the synaptic r...
Saved in:
Published in: | Applied physics letters 2024-08, Vol.125 (8) |
---|---|
Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | |
---|---|
cites | |
container_end_page | |
container_issue | 8 |
container_start_page | |
container_title | Applied physics letters |
container_volume | 125 |
creator | Lu, Jie Xiang, Zeyang Wang, Kexiang Wang, Ziyu Shi, Si Liu, Zuming Chen, Xiran Hu, Xinyu Jiang, Ran |
description | The synaptic response of ZnO/HfZrO memristor devices to electrical stimuli was studied. It was found that the frequency of the stimuli affects the rate of current increase, which can be explained by the cluster state of oxygen vacancies at the interface of ZnO/HfZrO. This variation in the synaptic response due to stimulus frequency was consistent with the dynamic adjustment of tolerance thresholds observed in the human brain's response to environmental stimuli. The rate of change in current, representing the sensitivity to stimuli, mirrors the biological nervous system's reaction to environmental changes, such as Ebbinghaus forgetting behavior. Additionally, frequent irregular changes in stimuli lead to a reduced lifespan of the devices, highly resembling the biological lifetime-injure on frequent environmental fluctuations. These findings highlight the memristors' significant similarity to biological nerves in response to stimuli, confirming their tremendous potential in bionic synaptic simulation applications. |
doi_str_mv | 10.1063/5.0224947 |
format | article |
fullrecord | <record><control><sourceid>proquest_scita</sourceid><recordid>TN_cdi_scitation_primary_10_1063_5_0224947</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3095256253</sourcerecordid><originalsourceid>FETCH-LOGICAL-p148t-3abbbe4f4e552ded69100f960b85d3f68f6f98e3ee5c8330f888711733dd11ca3</originalsourceid><addsrcrecordid>eNotUM1qwzAYM2ODdd0OewPDboO0_vLFjnMcZV0HhVy2Sy_GSWzq0vzMdjb69ktpT0JCSEKEPANbABO45AuWplmR5TdkBizPEwSQt2TGGMNEFBzuyUMIh4nyFHFG1mtvfkbT1ScaTp0eoqtpZfb61_We9pbuunK5sTtf0ta03oU4yX8u7ukwHoNpaIiuHY_ukdxZPQlPV5yT7_X712qTbMuPz9XbNhkgkzFBXVWVyWxmOE8b04gCGLOFYJXkDVohrbCFNGgMryUis1LKHCBHbBqAWuOcvFxyB99Ps0NUh3703VSpkBU85SLlOLleL65Qu6ij6zs1eNdqf1LA1PknxdX1J_wHTrVZxw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>3095256253</pqid></control><display><type>article</type><title>Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli</title><source>American Institute of Physics (AIP) Publications</source><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Lu, Jie ; Xiang, Zeyang ; Wang, Kexiang ; Wang, Ziyu ; Shi, Si ; Liu, Zuming ; Chen, Xiran ; Hu, Xinyu ; Jiang, Ran</creator><creatorcontrib>Lu, Jie ; Xiang, Zeyang ; Wang, Kexiang ; Wang, Ziyu ; Shi, Si ; Liu, Zuming ; Chen, Xiran ; Hu, Xinyu ; Jiang, Ran</creatorcontrib><description>The synaptic response of ZnO/HfZrO memristor devices to electrical stimuli was studied. It was found that the frequency of the stimuli affects the rate of current increase, which can be explained by the cluster state of oxygen vacancies at the interface of ZnO/HfZrO. This variation in the synaptic response due to stimulus frequency was consistent with the dynamic adjustment of tolerance thresholds observed in the human brain's response to environmental stimuli. The rate of change in current, representing the sensitivity to stimuli, mirrors the biological nervous system's reaction to environmental changes, such as Ebbinghaus forgetting behavior. Additionally, frequent irregular changes in stimuli lead to a reduced lifespan of the devices, highly resembling the biological lifetime-injure on frequent environmental fluctuations. These findings highlight the memristors' significant similarity to biological nerves in response to stimuli, confirming their tremendous potential in bionic synaptic simulation applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0224947</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Bionics ; Electrical stimuli ; Frequency variation ; Memristors ; Nervous system ; Service life assessment ; Zinc oxide</subject><ispartof>Applied physics letters, 2024-08, Vol.125 (8)</ispartof><rights>Author(s)</rights><rights>2024 Author(s). Published under an exclusive license by AIP Publishing.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-5465-4008</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/5.0224947$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27924,27925,76383</link.rule.ids></links><search><creatorcontrib>Lu, Jie</creatorcontrib><creatorcontrib>Xiang, Zeyang</creatorcontrib><creatorcontrib>Wang, Kexiang</creatorcontrib><creatorcontrib>Wang, Ziyu</creatorcontrib><creatorcontrib>Shi, Si</creatorcontrib><creatorcontrib>Liu, Zuming</creatorcontrib><creatorcontrib>Chen, Xiran</creatorcontrib><creatorcontrib>Hu, Xinyu</creatorcontrib><creatorcontrib>Jiang, Ran</creatorcontrib><title>Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli</title><title>Applied physics letters</title><description>The synaptic response of ZnO/HfZrO memristor devices to electrical stimuli was studied. It was found that the frequency of the stimuli affects the rate of current increase, which can be explained by the cluster state of oxygen vacancies at the interface of ZnO/HfZrO. This variation in the synaptic response due to stimulus frequency was consistent with the dynamic adjustment of tolerance thresholds observed in the human brain's response to environmental stimuli. The rate of change in current, representing the sensitivity to stimuli, mirrors the biological nervous system's reaction to environmental changes, such as Ebbinghaus forgetting behavior. Additionally, frequent irregular changes in stimuli lead to a reduced lifespan of the devices, highly resembling the biological lifetime-injure on frequent environmental fluctuations. These findings highlight the memristors' significant similarity to biological nerves in response to stimuli, confirming their tremendous potential in bionic synaptic simulation applications.</description><subject>Bionics</subject><subject>Electrical stimuli</subject><subject>Frequency variation</subject><subject>Memristors</subject><subject>Nervous system</subject><subject>Service life assessment</subject><subject>Zinc oxide</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNotUM1qwzAYM2ODdd0OewPDboO0_vLFjnMcZV0HhVy2Sy_GSWzq0vzMdjb69ktpT0JCSEKEPANbABO45AuWplmR5TdkBizPEwSQt2TGGMNEFBzuyUMIh4nyFHFG1mtvfkbT1ScaTp0eoqtpZfb61_We9pbuunK5sTtf0ta03oU4yX8u7ukwHoNpaIiuHY_ukdxZPQlPV5yT7_X712qTbMuPz9XbNhkgkzFBXVWVyWxmOE8b04gCGLOFYJXkDVohrbCFNGgMryUis1LKHCBHbBqAWuOcvFxyB99Ps0NUh3703VSpkBU85SLlOLleL65Qu6ij6zs1eNdqf1LA1PknxdX1J_wHTrVZxw</recordid><startdate>20240819</startdate><enddate>20240819</enddate><creator>Lu, Jie</creator><creator>Xiang, Zeyang</creator><creator>Wang, Kexiang</creator><creator>Wang, Ziyu</creator><creator>Shi, Si</creator><creator>Liu, Zuming</creator><creator>Chen, Xiran</creator><creator>Hu, Xinyu</creator><creator>Jiang, Ran</creator><general>American Institute of Physics</general><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-5465-4008</orcidid></search><sort><creationdate>20240819</creationdate><title>Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli</title><author>Lu, Jie ; Xiang, Zeyang ; Wang, Kexiang ; Wang, Ziyu ; Shi, Si ; Liu, Zuming ; Chen, Xiran ; Hu, Xinyu ; Jiang, Ran</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p148t-3abbbe4f4e552ded69100f960b85d3f68f6f98e3ee5c8330f888711733dd11ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Bionics</topic><topic>Electrical stimuli</topic><topic>Frequency variation</topic><topic>Memristors</topic><topic>Nervous system</topic><topic>Service life assessment</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Jie</creatorcontrib><creatorcontrib>Xiang, Zeyang</creatorcontrib><creatorcontrib>Wang, Kexiang</creatorcontrib><creatorcontrib>Wang, Ziyu</creatorcontrib><creatorcontrib>Shi, Si</creatorcontrib><creatorcontrib>Liu, Zuming</creatorcontrib><creatorcontrib>Chen, Xiran</creatorcontrib><creatorcontrib>Hu, Xinyu</creatorcontrib><creatorcontrib>Jiang, Ran</creatorcontrib><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Jie</au><au>Xiang, Zeyang</au><au>Wang, Kexiang</au><au>Wang, Ziyu</au><au>Shi, Si</au><au>Liu, Zuming</au><au>Chen, Xiran</au><au>Hu, Xinyu</au><au>Jiang, Ran</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli</atitle><jtitle>Applied physics letters</jtitle><date>2024-08-19</date><risdate>2024</risdate><volume>125</volume><issue>8</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The synaptic response of ZnO/HfZrO memristor devices to electrical stimuli was studied. It was found that the frequency of the stimuli affects the rate of current increase, which can be explained by the cluster state of oxygen vacancies at the interface of ZnO/HfZrO. This variation in the synaptic response due to stimulus frequency was consistent with the dynamic adjustment of tolerance thresholds observed in the human brain's response to environmental stimuli. The rate of change in current, representing the sensitivity to stimuli, mirrors the biological nervous system's reaction to environmental changes, such as Ebbinghaus forgetting behavior. Additionally, frequent irregular changes in stimuli lead to a reduced lifespan of the devices, highly resembling the biological lifetime-injure on frequent environmental fluctuations. These findings highlight the memristors' significant similarity to biological nerves in response to stimuli, confirming their tremendous potential in bionic synaptic simulation applications.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0224947</doi><tpages>7</tpages><orcidid>https://orcid.org/0000-0001-5465-4008</orcidid></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0003-6951 |
ispartof | Applied physics letters, 2024-08, Vol.125 (8) |
issn | 0003-6951 1077-3118 |
language | eng |
recordid | cdi_scitation_primary_10_1063_5_0224947 |
source | American Institute of Physics (AIP) Publications; American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
subjects | Bionics Electrical stimuli Frequency variation Memristors Nervous system Service life assessment Zinc oxide |
title | Frequency synaptic behavior of ZnO/HfZrO memristor with pulsed stimuli |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T22%3A10%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_scita&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Frequency%20synaptic%20behavior%20of%20ZnO/HfZrO%20memristor%20with%20pulsed%20stimuli&rft.jtitle=Applied%20physics%20letters&rft.au=Lu,%20Jie&rft.date=2024-08-19&rft.volume=125&rft.issue=8&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/5.0224947&rft_dat=%3Cproquest_scita%3E3095256253%3C/proquest_scita%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p148t-3abbbe4f4e552ded69100f960b85d3f68f6f98e3ee5c8330f888711733dd11ca3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=3095256253&rft_id=info:pmid/&rfr_iscdi=true |