Tunnel FET and bilayer Van der waal (vdW) source tunnel FET, A comparative study

Tunnel Field Effect Transistor (TFET) has proved to be a promising device in case of VLSI and ULSI circuit design. It is a good low power device in terms of minimum short channel effects and random dopant fluctuation in comparison to MOSFET. Semiconductor device production is devoted to support tech...

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Bibliographic Details
Main Authors: Biswas, Maitreyee, Dey, Anup
Format: Conference Proceeding
Language:English
Subjects:
Bilayers
Circuit design
Comparative studies
Field effect transistors
Homojunctions
Integrated circuits
Phosphorene
Power management
Power semiconductor devices
Tunnels
Online Access:Get full text
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Summary:Tunnel Field Effect Transistor (TFET) has proved to be a promising device in case of VLSI and ULSI circuit design. It is a good low power device in terms of minimum short channel effects and random dopant fluctuation in comparison to MOSFET. Semiconductor device production is devoted to support technology platform in two device types namely 1) high performance logic and 2) low power logic and More Moore Roadmap provides a view of enablement of continued scalling to make trends of improvement of device in low power possible. In spite of low Subthreshold Swing (SS) low ON current of conventional TFET exhibits a real challenge. Following the trend here in this paper we introduce an approach of increasing ION of TFET composed of Black Phosphorene(BP) homojunction by Van der waal (vdW) stacking in source region and is compared with its monolayer counterpart. Switching behavior is also studied and compared.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0225076