PbZrO3-based thin film capacitors with high energy storage efficiency

Antiferroelectric (Pb0.87Sr0.05Ba0.05La0.02)(Zr0.52Sn0.40Ti0.08)O3 thin film capacitors were fabricated for dielectric energy storage. Thin films with excellent crystal quality (FWHM 0.021°) were prepared on (100) SrRuO3/SrTiO3 substrates by pulsed laser deposition. The out-of-plane lattice constant...

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Bibliographic Details
Published in:Applied physics letters 2024-11, Vol.125 (21)
Main Authors: Son, Yeongwoo, Udovenko, Stanislav, Gaur, Anand P. S., Cui, Jun, Tan, Xiaoli, Trolier-McKinstry, Susan
Format: Article
Language:English
Subjects:
Antiferroelectricity
Capacitors
Crystal lattices
Electric fields
Energy storage
Lattice parameters
Low level
Pulsed laser deposition
Pulsed lasers
Room temperature
Substrates
Thin films
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Summary:Antiferroelectric (Pb0.87Sr0.05Ba0.05La0.02)(Zr0.52Sn0.40Ti0.08)O3 thin film capacitors were fabricated for dielectric energy storage. Thin films with excellent crystal quality (FWHM 0.021°) were prepared on (100) SrRuO3/SrTiO3 substrates by pulsed laser deposition. The out-of-plane lattice constant of the thin film was 4.110  ± 0.001 Å. An average maximum recoverable energy storage density, 88  ± 17 J cm−3 with an efficiency of 85%  ± 6% at 1 kHz and 80  ± 15 J cm−3 with an efficiency of 91%  ± 4% at 10 kHz, was achieved at room temperature. The capacitor was fatigue resistant up to 106 cycles at an applied electric field of 2 MV cm−1. These properties are linked to a low level of hysteresis and slow polarization saturation. PbZrO3-derived oxide thin film capacitors are promising for high efficiency and low loss dielectric energy storage applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0237948