Electric field management in β-Ga2O3 vertical Schottky diodes using high-k bismuth zinc niobium oxide

In this work, we have integrated bismuth zinc niobium oxide (BZN), a high-k dielectric material, in metal–insulator–semiconductor (MIS) and field-plated metal–semiconductor (FP-MS) Schottky barrier diodes on β-Ga2O3. This increases the breakdown voltage ( VBR) from 300 to 600 V by redistributing the...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2024-12, Vol.125 (24)
Main Authors: Sharma, Pooja, Parasubotu, Yeshwanth, Lodha, Saurabh
Format: Article
Language:English
Subjects:
Bismuth
Current voltage characteristics
Display devices
Electric fields
Gallium oxides
Impact resistance
MIS (semiconductors)
Niobium oxides
Schottky diodes
Zinc
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work, we have integrated bismuth zinc niobium oxide (BZN), a high-k dielectric material, in metal–insulator–semiconductor (MIS) and field-plated metal–semiconductor (FP-MS) Schottky barrier diodes on β-Ga2O3. This increases the breakdown voltage ( VBR) from 300 to 600 V by redistributing the electric fields, leveraging the high permittivity of BZN (k ∼ 210). Enhancement in Schottky barrier height, by approximately 0.14 eV for MIS and 0.28 eV for FP-MS devices, also contributes to the improved VBR. BZN inclusion has minimal impact on specific on-resistance ( Ron,sp). Additionally, the devices display excellent current–voltage characteristics with ideality factors close to unity and an on/off current ratio greater than 1010. This work presents the most significant VBR enhancement reported-to-date for MIS devices on β-Ga2O3 without compromising turn-on voltage and Ron,sp. A comparison of FP-MS and MIS devices shows that FP-MS outperforms MIS in terms of lower Ron,sp, higher Schottky barrier height, and improved VBR.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0240375