Molecular beam epitaxy of superconducting zirconium nitride on GaN substrates

Epitaxial integration of metals and semiconductors can enable enhanced performance and novel functionality. Achieving such pristine interfaces with superconducting materials is of increasing interest for quantum devices and detectors, but the experimental demonstration remains challenging, given the...

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Bibliographic Details
Published in:AIP advances 2024-12, Vol.14 (12), p.125327-125327-5
Main Authors: May, Brelon J., Regmi, Sabin, Khanolkar, Amey R., Buturlim, Volodymyr, Cresswell, Zachery E., Vallejo, Kevin D., Gofryk, Krzysztof, Hurley, David H.
Format: Article
Language:English
Subjects:
Critical temperature
Deposition
Epitaxial growth
Gallium nitrides
Metal nitrides
Molecular beam epitaxy
Optical properties
Plasma frequencies
Semiconductors
Substrates
Superconductivity
Thin films
Zirconium nitrides
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Summary:Epitaxial integration of metals and semiconductors can enable enhanced performance and novel functionality. Achieving such pristine interfaces with superconducting materials is of increasing interest for quantum devices and detectors, but the experimental demonstration remains challenging, given the very limited studies on single crystalline systems. To expand the potential materials for these systems, this work explores the deposition of zirconium nitride superconducting thin films on GaN substrates at various temperatures using molecular beam epitaxy. A general trend of decreasing superconducting critical temperature is observed as the deposition temperature is reduced. The optical properties reveal a transition from metallic to dielectric behavior with colder deposition. The plasma frequency of the metallic films is also observed to be a function of growth temperature. These results pave the way for the integration of a highly tunable metal nitride with a well-established semiconductor system.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0242982